FDS2734 Datasheet and Replacement
Type Designator: FDS2734
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id| ⓘ - Maximum Drain Current: 3 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 32 nC
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 85 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.117 Ohm
Package: SO-8
FDS2734 substitution
FDS2734 Datasheet (PDF)
fds2734.pdf
August 2006FDS2734tmN-Channel UItraFET Trench MOSFET 250V, 3.0A, 117mFeatures General DescriptionsThis single N-Channel MOSFET is produced using Max rDS(on) =117m at VGS =10V, ID = 3.0AFairchild Semiconductors advanced UItraFET Trenchprocess that has been especially tailored to minimize Max rDS(on) =126m at VGS = 6V, ID = 2.8Athe on-state resistance and y
fds2734.pdf
Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur
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