STF06N20 Datasheet and Replacement
Type Designator: STF06N20
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 5 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 8.7 nS
Cossⓘ - Output Capacitance: 24 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO220F
STF06N20 substitution
STF06N20 Datasheet (PDF)
stf06n20.pdf
STP06N20GreenProductSTF06N20aS mHop Microelectronics C orp.Ver 1.0N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.1.1 @ VGS=10VTO-220 and TO-220F Package.200V 5A1.3 @ VGS=4.5VDGG D S G D SSTP SERIES STF SERIESTO-220 TO-220FSABSOLUTE MAXI
Datasheet: STF2454A , FDS2734 , FDS3512 , FDS3572 , FDS3590 , FDS3672 , STF2454 , FDS3692 , 13N50 , FDS3890 , FDS3992 , STE339S , FDS4141 , FDS4141F085 , FDS4435BZ , FDS4435BZF085 , FDS4465 .
History: 2SJ196
Keywords - STF06N20 MOSFET datasheet
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History: 2SJ196
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