FDS3890 Datasheet. Specs and Replacement

Type Designator: FDS3890  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 4.7 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 8 nS

Cossⓘ - Output Capacitance: 171 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm

Package: SO-8

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FDS3890 datasheet

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FDS3890

February 2001 FDS3890 80V N-Channel Dual PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.7 A, 80 V. RDS(ON) = 44 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 50 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Fast switching spe... See More ⇒

Detailed specifications: FDS2734, FDS3512, FDS3572, FDS3590, FDS3672, STF2454, FDS3692, STF06N20, 5N60, FDS3992, STE339S, FDS4141, FDS4141F085, FDS4435BZ, FDS4435BZF085, FDS4465, FDS4465F085

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