All MOSFET. FDS3890 Datasheet

 

FDS3890 Datasheet and Replacement


   Type Designator: FDS3890
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 4.7 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   Qg ⓘ - Total Gate Charge: 25 nC
   tr ⓘ - Rise Time: 8 nS
   Cossⓘ - Output Capacitance: 171 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
   Package: SO-8
 

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FDS3890 Datasheet (PDF)

 ..1. Size:85K  fairchild semi
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FDS3890

February 2001 FDS3890 80V N-Channel Dual PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed4.7 A, 80 V. RDS(ON) = 44 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 50 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Fast switching spe

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