FDS3890 Specs and Replacement
Type Designator: FDS3890
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 4.7 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 8 nS
Cossⓘ - Output Capacitance: 171 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.044 Ohm
Package: SO-8
FDS3890 substitution
FDS3890 datasheet
fds3890.pdf
February 2001 FDS3890 80V N-Channel Dual PowerTrench MOSFET General Description Features This N-Channel MOSFET has been designed 4.7 A, 80 V. RDS(ON) = 44 m @ VGS = 10 V specifically to improve the overall efficiency of DC/DC RDS(ON) = 50 m @ VGS = 6 V converters using either synchronous or conventional switching PWM controllers. Fast switching spe... See More ⇒
Detailed specifications: FDS2734 , FDS3512 , FDS3572 , FDS3590 , FDS3672 , STF2454 , FDS3692 , STF06N20 , AO4407 , FDS3992 , STE339S , FDS4141 , FDS4141F085 , FDS4435BZ , FDS4435BZF085 , FDS4465 , FDS4465F085 .
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