FDS4141F085 Datasheet. Specs and Replacement

Type Designator: FDS4141F085  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10.8 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4.4 nS

Cossⓘ - Output Capacitance: 355 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm

Package: SO-8

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FDS4141F085 substitution

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FDS4141F085 datasheet

 7.1. Size:251K  fairchild semi
 fds4141 f085.pdf pdf_icon

FDS4141F085

May 2009 FDS4141_F085 P-Channel PowerTrench MOSFET -40V, -10.8A, 19.0m Applications Features Control switch in synchronous & non-synchronous buck Typ rDS(on) = 10.5m at VGS = -10V, ID = -10.5A Load switch Typ rDS(on) = 14.8m at VGS = -4.5V, ID = -8.4A Inverter Typ Qg(TOT) = 35nC at VGS = -10V High performance trench technology for extremely low rDS(on) RoHS ... See More ⇒

 7.2. Size:219K  fairchild semi
 fds4141.pdf pdf_icon

FDS4141F085

November 2007 FDS4141 P-Channel PowerTrench MOSFET -40V, -10.8A, 13.0m Features General Description Max rDS(on) = 13.0m at VGS = -10V, ID = -10.5A This P-Channel MOSFET has been produced using Fairchild Semiconductor s proprietary PowerTrench technology to Max rDS(on) = 19.0m at VGS = -4.5V, ID = -8.4A deliver low rDS(on) and optimized BVDSS capability to offer Hi... See More ⇒

Detailed specifications: FDS3672, STF2454, FDS3692, STF06N20, FDS3890, FDS3992, STE339S, FDS4141, 10N65, FDS4435BZ, FDS4435BZF085, FDS4465, FDS4465F085, FDS4470, FDS4488, STD12L01, FDS4501H

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