All MOSFET. FDS4141F085 Datasheet

 

FDS4141F085 Datasheet and Replacement


   Type Designator: FDS4141F085
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id| ⓘ - Maximum Drain Current: 10.8 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 35 nC
   tr ⓘ - Rise Time: 4.4 nS
   Cossⓘ - Output Capacitance: 355 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: SO-8
 

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FDS4141F085 Datasheet (PDF)

 7.1. Size:251K  fairchild semi
 fds4141 f085.pdf pdf_icon

FDS4141F085

May 2009FDS4141_F085P-Channel PowerTrench MOSFET-40V, -10.8A, 19.0m Applications Features Control switch in synchronous & non-synchronous buck Typ rDS(on) = 10.5m at VGS = -10V, ID = -10.5A Load switch Typ rDS(on) = 14.8m at VGS = -4.5V, ID = -8.4A Inverter Typ Qg(TOT) = 35nC at VGS = -10V High performance trench technology for extremely low rDS(on) RoHS

 7.2. Size:219K  fairchild semi
 fds4141.pdf pdf_icon

FDS4141F085

November 2007FDS4141P-Channel PowerTrench MOSFET -40V, -10.8A, 13.0mFeatures General Description Max rDS(on) = 13.0m at VGS = -10V, ID = -10.5A This P-Channel MOSFET has been produced using Fairchild Semiconductors proprietary PowerTrench technology to Max rDS(on) = 19.0m at VGS = -4.5V, ID = -8.4Adeliver low rDS(on) and optimized BVDSS capability to offer Hi

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