All MOSFET. SSU65R600S2 Datasheet

 

SSU65R600S2 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSU65R600S2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 80 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 11.8 nC
   trⓘ - Rise Time: 26 nS
   Cossⓘ - Output Capacitance: 36 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.62 Ohm
   Package: TO252

 SSU65R600S2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSU65R600S2 Datasheet (PDF)

 ..1. Size:907K  cn super semi
sst65r600s2 ssu65r600s2.pdf

SSU65R600S2
SSU65R600S2

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen-SS*65R600S2Rev. 1.2Sep. 2023www.supersemi.com.cnSST65R600S2/SSU65R600S2650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizing an advance

 8.1. Size:1313K  cn super semi
ssf65r420s2 ssp65r420s2 sst65r420s2 ssu65r420s2.pdf

SSU65R600S2
SSU65R600S2

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor650V Super Junction Power MOSFET Gen-SS*65R420S2Rev. 2.1Aug. 2022www.supersemi.com.cnSSF65R420S2/SSP65R420S2/SST65R420S2/SSU65R420S2650V N-Channel Super-Junction MOSFET Gen-Description FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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