SSU90R1K5S Spec and Replacement
Type Designator: SSU90R1K5S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 37 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 4.2 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 19 nS
Cossⓘ - Output Capacitance: 88 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
Package: TO251
SSU90R1K5S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSU90R1K5S Specs
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SUPER-SEMI SUPER-MOSFET Super Junction Metal Oxide Semiconductor Field Effect Transistor 900V Super Junction Power MOSFET SS*90R1K5S Rev. 1.2 Aug. 2019 www.supersemi.com.cn September, 2013 SJ-FET SSF90R1K5S/SSP90R1K5S/SST90R1K5S/SSU90R1K5S 900V N-Channel MOSFET Description Features SJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FET is utilizi... See More ⇒
Detailed specifications: SST90R1K5S , SST90R420S2 , SST90R650S2 , SST90R900S2 , SSU65R420S2 , SSU65R600S2 , SSU70R1K2S2E , SSU70R600S2 , IRF9540 , SSW4668 , SSW50R060S , SSW60R028S2E , SSW60R030SFD2 , SSW60R040S2E , SSW60R043SFD2 , SSW60R070S2E , SSW60R075SFD2 .
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