All MOSFET. SSU90R1K5S Datasheet

 

SSU90R1K5S MOSFET. Datasheet pdf. Equivalent


   Type Designator: SSU90R1K5S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 37 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 4.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 6.5 nC
   trⓘ - Rise Time: 19 nS
   Cossⓘ - Output Capacitance: 88 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.5 Ohm
   Package: TO251

 SSU90R1K5S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SSU90R1K5S Datasheet (PDF)

 ..1. Size:1120K  cn super semi
 ssf90r1k5s ssp90r1k5s sst90r1k5s ssu90r1k5s.pdf

SSU90R1K5S SSU90R1K5S

SUPER-SEMISUPER-MOSFETSuper Junction Metal Oxide Semiconductor Field Effect Transistor900V Super Junction Power MOSFETSS*90R1K5SRev. 1.2Aug. 2019www.supersemi.com.cnSeptember, 2013SJ-FETSSF90R1K5S/SSP90R1K5S/SST90R1K5S/SSU90R1K5S900V N-Channel MOSFETDescription FeaturesSJ-FET is new generation of high voltage MOSFET family that Multi-Epi process SJ-FETis utilizi

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