SSW4668 Datasheet. Specs and Replacement

Type Designator: SSW4668  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 507 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 130 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 105 nS

Cossⓘ - Output Capacitance: 860 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm

Package: TO247

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SSW4668 datasheet

 ..1. Size:784K  cn super semi
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SSW4668

SUPER-SEMI SUPER-MOSFET Metal Oxide Semiconductor Field Effect Transistor 200V Power MOSFET SSW4668 Rev. 1.0 Nov. 2023 www.supersemi.com.cn SSW4668 200V N-Channel Power MOSFET Description Features VDS 200V The MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 130A that is uniquely optimized to provide the most efficient high Typ. RDS(on) = 9.1m freque... See More ⇒

Detailed specifications: SST90R420S2, SST90R650S2, SST90R900S2, SSU65R420S2, SSU65R600S2, SSU70R1K2S2E, SSU70R600S2, SSU90R1K5S, 2N7000, SSW50R060S, SSW60R028S2E, SSW60R030SFD2, SSW60R040S2E, SSW60R043SFD2, SSW60R070S2E, SSW60R075SFD2, SSW60R099S2E

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