All MOSFET. SSW4668 Datasheet

 

SSW4668 Datasheet and Replacement


   Type Designator: SSW4668
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 507 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 130 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 105 nS
   Cossⓘ - Output Capacitance: 860 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm
   Package: TO247
 

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SSW4668 Datasheet (PDF)

 ..1. Size:784K  cn super semi
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SSW4668

SUPER-SEMISUPER-MOSFETMetal Oxide Semiconductor Field Effect Transistor200V Power MOSFETSSW4668Rev. 1.0Nov. 2023www.supersemi.com.cnSSW4668200V N-Channel Power MOSFETDescription Features VDS 200VThe MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 130Athat is uniquely optimized to provide the most efficient high Typ. RDS(on) = 9.1mfreque

Datasheet: SST90R420S2 , SST90R650S2 , SST90R900S2 , SSU65R420S2 , SSU65R600S2 , SSU70R1K2S2E , SSU70R600S2 , SSU90R1K5S , 2N7000 , SSW50R060S , SSW60R028S2E , SSW60R030SFD2 , SSW60R040S2E , SSW60R043SFD2 , SSW60R070S2E , SSW60R075SFD2 , SSW60R099S2E .

History: HY3403U | STB70NF03LT4 | KIA2803A-263 | NTMFS4C09N | IPI50N10S3L-16 | IRF7701G | TK6A65W

Keywords - SSW4668 MOSFET datasheet

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