SSW4668 Spec and Replacement
Type Designator: SSW4668
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 507 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 130 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 105 nS
Cossⓘ - Output Capacitance: 860 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0098 Ohm
Package: TO247
SSW4668 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SSW4668 Specs
ssw4668.pdf
SUPER-SEMI SUPER-MOSFET Metal Oxide Semiconductor Field Effect Transistor 200V Power MOSFET SSW4668 Rev. 1.0 Nov. 2023 www.supersemi.com.cn SSW4668 200V N-Channel Power MOSFET Description Features VDS 200V The MOSFET uses advanced trench MOSFET technology ID (at Vgs=10V) 130A that is uniquely optimized to provide the most efficient high Typ. RDS(on) = 9.1m freque... See More ⇒
Detailed specifications: SST90R420S2 , SST90R650S2 , SST90R900S2 , SSU65R420S2 , SSU65R600S2 , SSU70R1K2S2E , SSU70R600S2 , SSU90R1K5S , AON7408 , SSW50R060S , SSW60R028S2E , SSW60R030SFD2 , SSW60R040S2E , SSW60R043SFD2 , SSW60R070S2E , SSW60R075SFD2 , SSW60R099S2E .
History: HAT1046R
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