SWU069R10VS Specs and Replacement
Type Designator: SWU069R10VS
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 178.6 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 51 nS
Cossⓘ - Output Capacitance: 494 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0089 Ohm
Package: TO262
SWU069R10VS substitution
SWU069R10VS datasheet
swha069r10vs swi069r10vs swd069r10vs swp069r10vs swu069r10vs.pdf
SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220/TO-262 MOSFET Features TO-252 TO-220 TO-262 DFN5*6 TO-251 BVDSS 100V High ruggedness Low RDS(ON) (Typ 9.0m )@VGS=4.5V ID 70A 1 8 Low RDS(ON) (Typ 7.1m )@VGS=10V 2 7 6 3 RDS(ON) 9.0m @VGS=4.5V Low Gate Charge (Typ 45nC) 4 5 Improved dv/dt Capability 7.1m @VGS=10V ... See More ⇒
Detailed specifications: SWT47N60K , SWT47N65K , SWT47N65K2F , SWT47N65KF , SWT47N70K , SWT50N65LF , SWT69N65K2 , SWT69N65K2F , 20N60 , SWU100R10VT , SWU10N65D , SWU10N65K , SWU11N65D , SWU16N70K , SWU6N65K , SWU8N60D , SWU8N65K .
Keywords - SWU069R10VS MOSFET specs
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SWU069R10VS replacement
Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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