All MOSFET. SWU069R10VS Datasheet

 

SWU069R10VS Datasheet and Replacement


   Type Designator: SWU069R10VS
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 178.6 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 51 nS
   Cossⓘ - Output Capacitance: 494 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0089 Ohm
   Package: TO262
 

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SWU069R10VS Datasheet (PDF)

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SWU069R10VS

SW069R10VS N-channel Enhanced mode DFN5*6/TO-251/TO-252/TO-220/TO-262 MOSFET Features TO-252 TO-220 TO-262 DFN5*6 TO-251 BVDSS : 100V High ruggedness Low RDS(ON) (Typ 9.0m)@VGS=4.5V ID : 70A 1 8 Low RDS(ON) (Typ 7.1m)@VGS=10V 2 7 6 3 RDS(ON) : 9.0m@VGS=4.5V Low Gate Charge (Typ 45nC) 4 5 Improved dv/dt Capability 7.1m@VGS=10V

Datasheet: SWT47N60K , SWT47N65K , SWT47N65K2F , SWT47N65KF , SWT47N70K , SWT50N65LF , SWT69N65K2 , SWT69N65K2F , IRF840 , SWU100R10VT , SWU10N65D , SWU10N65K , SWU11N65D , SWU16N70K , SWU6N65K , SWU8N60D , SWU8N65K .

History: DHI10H037R | SWN7N70D | NDP05N50Z

Keywords - SWU069R10VS MOSFET datasheet

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