SWUI7N65D Datasheet. Specs and Replacement

Type Designator: SWUI7N65D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 173.6 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 108 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO251

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SWUI7N65D datasheet

 ..1. Size:1401K  samwin
 swp7n65d swi7n65d swn7n65d swui7n65d swd7n65d swf7n65d swmn7n65d swj7n65d swha7n65d swy7n65d.pdf pdf_icon

SWUI7N65D

SW7N65D N-channel Enhanced mode TO-220/TO-251/TO-251N/TO-251U/TO-252/TO- 220F/TO-220SF/TO-262N/DFN5*6/TO-220FT MOSFET Features TO-220 TO-251 TO-251N TO-251U TO-252 BVDSS 650V High ruggedness ID 7A Low RDS(ON) (Typ 1.1 ) @VGS=10V RDS(ON) 1.1 1 1 1 1 1 2 2 Low Gate Charge (Typ 30nC) 2 2 2 3 3 3 3 3 Improved dv/dt Capability D TO-220FT TO-262N DFN... See More ⇒

Detailed specifications: SWU10N65D, SWU10N65K, SWU11N65D, SWU16N70K, SWU6N65K, SWU8N60D, SWU8N65K, SWU8N80K, IRFP260N, SWW20N65K, SWWF7N90D, SWX090R15ET, SWX170R15ET, SWX38N65K2F, SWY10N65D, SWY12N65D, SWY4N60D

Keywords - SWUI7N65D MOSFET specs

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