SP8010E Datasheet. Specs and Replacement

Type Designator: SP8010E  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.67 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 26 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 304 nS

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm

Package: TSON3.3X3.3

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SP8010E datasheet

 ..1. Size:112K  samhop
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SP8010E

Green Product SP8010E a S mHop Microelectronics C orp. Ver 1.2 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 4.3 @ VGS=10V Suface Mount Package. 24V 26A 4.9 @ VGS=6V ESD Protected. 7.0 @ VGS=4V D 5 4 G D 6 3 S 7 2 D S Pin 1 8 1 D S TSON 3.3 x 3.3... See More ⇒

 9.1. Size:109K  samhop
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SP8010E

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Detailed specifications: FDS6990AS, SP8076, FDS6994S, SP8013, FDS8447, FDS8449, FDS8449F085, FDS86106, 2SK3568, FDS86140, SP8009EL, FDS86141, SP8005, FDS86240, FDS86242, FDS86252, FDS8638

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