SP8010E Datasheet and Replacement
Type Designator: SP8010E
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 1.67 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2 V
|Id| ⓘ - Maximum Drain Current: 26 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 27 nC
tr ⓘ - Rise Time: 304 nS
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
Package: TSON3.3X3.3
SP8010E substitution
SP8010E Datasheet (PDF)
sp8010e.pdf
GreenProductSP8010EaS mHop Microelectronics C orp.Ver 1.2N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.4.3 @ VGS=10VSuface Mount Package.24V 26A 4.9 @ VGS=6V ESD Protected.7.0 @ VGS=4V D 5 4 GD 6 3S7 2D SPin 18 1D STSON 3.3 x 3.3
sp8013.pdf
GreenProductSP8013aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.7.9 @ VGS=-10VSuface Mount Package.-20V -20A11.2 @ VGS=-4.5VESD Protected.D 5 4G6 3D S7 2D SPin 1D 8 1STSON 3.3 x 3.3(TA=25
Datasheet: FDS6990AS , SP8076 , FDS6994S , SP8013 , FDS8447 , FDS8449 , FDS8449F085 , FDS86106 , 2SK3568 , FDS86140 , SP8009EL , FDS86141 , SP8005 , FDS86240 , FDS86242 , FDS86252 , FDS8638 .
Keywords - SP8010E MOSFET datasheet
SP8010E cross reference
SP8010E equivalent finder
SP8010E lookup
SP8010E substitution
SP8010E replacement
