All MOSFET. SP8010E Datasheet

 

SP8010E Datasheet and Replacement


   Type Designator: SP8010E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.67 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 304 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: TSON3.3X3.3
 

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SP8010E Datasheet (PDF)

 ..1. Size:112K  samhop
 sp8010e.pdf pdf_icon

SP8010E

GreenProductSP8010EaS mHop Microelectronics C orp.Ver 1.2N-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.4.3 @ VGS=10VSuface Mount Package.24V 26A 4.9 @ VGS=6V ESD Protected.7.0 @ VGS=4V D 5 4 GD 6 3S7 2D SPin 18 1D STSON 3.3 x 3.3

 9.1. Size:109K  samhop
 sp8013.pdf pdf_icon

SP8010E

GreenProductSP8013aS mHop Microelectronics C orp.Ver 1.0P-Channel Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) (m) MaxRugged and reliable.7.9 @ VGS=-10VSuface Mount Package.-20V -20A11.2 @ VGS=-4.5VESD Protected.D 5 4G6 3D S7 2D SPin 1D 8 1STSON 3.3 x 3.3(TA=25

Datasheet: FDS6990AS , SP8076 , FDS6994S , SP8013 , FDS8447 , FDS8449 , FDS8449F085 , FDS86106 , 12N60 , FDS86140 , SP8009EL , FDS86141 , SP8005 , FDS86240 , FDS86242 , FDS86252 , FDS8638 .

Keywords - SP8010E MOSFET datasheet

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