SP8010E PDF and Equivalents Search

 

SP8010E Specs and Replacement


   Type Designator: SP8010E
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.67 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 24 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 26 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 304 nS
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0054 Ohm
   Package: TSON3.3X3.3
 

 SP8010E substitution

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SP8010E datasheet

 ..1. Size:112K  samhop
 sp8010e.pdf pdf_icon

SP8010E

Green Product SP8010E a S mHop Microelectronics C orp. Ver 1.2 N-Channel Enhancement Mode Field Effect Transistor FEATURES PRODUCT SUMMARY Super high dense cell design for low RDS(ON). RDS(ON) (m ) Typ VDSS ID Rugged and reliable. 4.3 @ VGS=10V Suface Mount Package. 24V 26A 4.9 @ VGS=6V ESD Protected. 7.0 @ VGS=4V D 5 4 G D 6 3 S 7 2 D S Pin 1 8 1 D S TSON 3.3 x 3.3... See More ⇒

 9.1. Size:109K  samhop
 sp8013.pdf pdf_icon

SP8010E

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Detailed specifications: FDS6990AS , SP8076 , FDS6994S , SP8013 , FDS8447 , FDS8449 , FDS8449F085 , FDS86106 , K3569 , FDS86140 , SP8009EL , FDS86141 , SP8005 , FDS86240 , FDS86242 , FDS86252 , FDS8638 .

Keywords - SP8010E MOSFET specs

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