All MOSFET. S85N16RN Datasheet

 

S85N16RN MOSFET. Datasheet pdf. Equivalent


   Type Designator: S85N16RN
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.6 V
   |Id|ⓘ - Maximum Drain Current: 153 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 81 nC
   trⓘ - Rise Time: 46 nS
   Cossⓘ - Output Capacitance: 665 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0053 Ohm
   Package: TO220

 S85N16RN Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

S85N16RN Datasheet (PDF)

 ..1. Size:2322K  cn si-tech
 s85n16r s85n16s s85n16rn s85n16rp.pdf

S85N16RN S85N16RN

S85N16R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=85V,ID=153A DC Motor Control Rds(on)(typ)=4.6m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

History: IXFN360N10T

 

 
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