All MOSFET. S85N16RP Datasheet

 

S85N16RP MOSFET. Datasheet pdf. Equivalent


   Type Designator: S85N16RP
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 250 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 85 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.6 V
   |Id|ⓘ - Maximum Drain Current: 153 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 81 nC
   Rise Time (tr): 46 nS
   Drain-Source Capacitance (Cd): 665 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.0053 Ohm
   Package: TO220

 S85N16RP Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

S85N16RP Datasheet (PDF)

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 s85n16r s85n16s s85n16rn s85n16rp.pdf

S85N16RP S85N16RP

S85N16R/S/RN/RP SI-TECH SEMICONDUCTOR CO.,LTD N-Channel Power MOSFETFeatures Applications VDS=85V,ID=153A DC Motor Control Rds(on)(typ)=4.6m@Vgs=10V DC-DC Converters 100% Avalanche Tested BMS 100% Rg Tested SMPS Lead-Free (RoHS Compliant) Automotive Environment Internal Circuit and Pin Description DDGG G GG D DD

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