All MOSFET. DP3080 Datasheet

 

DP3080 Datasheet and Replacement


   Type Designator: DP3080
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 75 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 80 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 278 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm
   Package: TO252
 

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DP3080 Datasheet (PDF)

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DP3080

DP3080TO-252Datasheet of DP3080TO-25218033419374QQ2171689052Shenzhen Developer Microelectronics Co.,Ltd.707-710Address:Unit 7-10,7/F.,west block, Skyworth Semiconductor design Building,The 4th on High-tech Zone, Nanshan

Datasheet: S85N042S , S85N048S , S85N16R , S85N16RN , S85N16RP , S85N16S , CRST037N10N , CRSS035N10N , IRFB4115 , HY3506P , HY3506B , LTP70N06P , NCE65TF130T , HG3P056N20S , HG3P095N25S , HGA025N06S , HGA028NE6AL .

History: RFP7N10LE | FQI19N20TU

Keywords - DP3080 MOSFET datasheet

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