DP3080 Datasheet. Specs and Replacement

Type Designator: DP3080  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 75 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 80 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 278 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0055 Ohm

Package: TO252

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DP3080 datasheet

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DP3080

DP3080 TO-252 Datasheet of DP3080 TO-252 18033419374 QQ 2171689052 Shenzhen Developer Microelectronics Co.,Ltd. 707-710 Address Unit 7-10,7/F.,west block, Skyworth Semiconductor design Building, The 4th on High-tech Zone, Nanshan ... See More ⇒

Detailed specifications: S85N042S, S85N048S, S85N16R, S85N16RN, S85N16RP, S85N16S, CRST037N10N, CRSS035N10N, 8205A, HY3506P, HY3506B, LTP70N06P, NCE65TF130T, HG3P056N20S, HG3P095N25S, HGA025N06S, HGA028NE6AL

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