HY3506B Datasheet. Specs and Replacement

Type Designator: HY3506B  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 306 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 190 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 1010 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO263

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HY3506B substitution

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HY3506B datasheet

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HY3506B

HY3506P/B N-Channel Enhancement Mode MOSFET Features Pin Description 60V/190A RDS(ON)= 3.5 m (typ.) @ VGS=10V 100% avalanche tested S D G Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Switching application Power Management for Inverter Systems. N-Channel MOSFET Ordering and ... See More ⇒

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HY3506B

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HY3506B

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Detailed specifications: S85N16R, S85N16RN, S85N16RP, S85N16S, CRST037N10N, CRSS035N10N, DP3080, HY3506P, 10N60, LTP70N06P, NCE65TF130T, HG3P056N20S, HG3P095N25S, HGA025N06S, HGA028NE6AL, HGA040N06S, HGA040N06SL

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.