HY3506B Spec and Replacement
Type Designator: HY3506B
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 306 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 190 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 12 nS
Cossⓘ - Output Capacitance: 1010 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO263
HY3506B Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HY3506B Specs
hy3506p hy3506b.pdf
HY3506P/B N-Channel Enhancement Mode MOSFET Features Pin Description 60V/190A RDS(ON)= 3.5 m (typ.) @ VGS=10V 100% avalanche tested S D G Reliable and Rugged S D Lead Free and Green Devices Available G (RoHS Compliant) TO-220FB-3L TO-263-2L Applications Switching application Power Management for Inverter Systems. N-Channel MOSFET Ordering and ... See More ⇒
Detailed specifications: S85N16R , S85N16RN , S85N16RP , S85N16S , CRST037N10N , CRSS035N10N , DP3080 , HY3506P , AON6414A , LTP70N06P , NCE65TF130T , HG3P056N20S , HG3P095N25S , HGA025N06S , HGA028NE6AL , HGA040N06S , HGA040N06SL .
Keywords - HY3506B MOSFET specs
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