All MOSFET. HGA037N10T Datasheet

 

HGA037N10T Datasheet and Replacement


   Type Designator: HGA037N10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 58 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 168 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 895 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: TO-220F
 

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HGA037N10T Datasheet (PDF)

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HGA037N10T

HGB037N10T HGP037N10T P-1,HGA037N10T100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Smooth Switching3.7RDS(on),max mW Enhanced Body diode dv/dt capability168 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power Tools

Datasheet: HGB035N10A , HGK035N10A , HGP035N10A , HGB037N10S , HGK037N10S , HGP037N10S , HGB037N10T , HGP037N10T , 2SK3878 , HGB037N15M , HGB039N08A , HGP039N08A , HGB039N08S , HGK039N08S , HGP039N08S , HGB039N12S , HGK039N12S .

History: 90N02 | STD3PK50Z | TDM3742 | IRFSL3107 | PMN38EN | AON6442 | IPD50R950CE

Keywords - HGA037N10T MOSFET datasheet

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