All MOSFET. HGA037N10T Datasheet

 

HGA037N10T MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGA037N10T
   Marking Code: GA037N10T
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 58 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 168 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 88 nC
   trⓘ - Rise Time: 30 nS
   Cossⓘ - Output Capacitance: 895 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm
   Package: TO-220F

 HGA037N10T Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGA037N10T Datasheet (PDF)

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 hgb037n10t hgp037n10t hga037n10t.pdf

HGA037N10T HGA037N10T

HGB037N10T HGP037N10T P-1,HGA037N10T100V N-Ch Power MOSFETFeature100 VVDS High Speed Power Smooth Switching3.7RDS(on),max mW Enhanced Body diode dv/dt capability168 AID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power Tools

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