HGA037N10T Datasheet. Specs and Replacement

Type Designator: HGA037N10T  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 58 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 168 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 30 nS

Cossⓘ - Output Capacitance: 895 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0037 Ohm

Package: TO-220F

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HGA037N10T datasheet

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HGA037N10T

HGB037N10T HGP037N10T P-1 , HGA037N10T 100V N-Ch Power MOSFET Feature 100 V VDS High Speed Power Smooth Switching 3.7 RDS(on),max mW Enhanced Body diode dv/dt capability 168 A ID Enhanced Avalanche Ruggedness 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circuit Power Tools... See More ⇒

Detailed specifications: HGB035N10A, HGK035N10A, HGP035N10A, HGB037N10S, HGK037N10S, HGP037N10S, HGB037N10T, HGP037N10T, IRF9540, HGB037N15M, HGB039N08A, HGP039N08A, HGB039N08S, HGK039N08S, HGP039N08S, HGB039N12S, HGK039N12S

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