HGK043N15S MOSFET. Datasheet pdf. Equivalent
Type Designator: HGK043N15S
Marking Code: GK043N15S
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 429 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 146 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 70 nC
trⓘ - Rise Time: 24 nS
Cossⓘ - Output Capacitance: 745 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm
Package: TO-247
HGK043N15S Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HGK043N15S Datasheet (PDF)
hgb043n15s hgk043n15s hgp043n15s.pdf
, P-1HGB043N15S HGK043N15SHGP043N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 3.9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 4.2RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 4.3RDS(on),typ mW 100% UIS Tested, 100% Rg Tested206 AID (Sillicon Limited) Lead FreeApplication Synchronous
hgb045n15s hgk045n15s hgp045n15s.pdf
, P-1HGB045N15S HGK045N15SHGP045N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 4.1RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 4.1RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 4.1RDS(on),typ mW 100% UIS Tested, 100% Rg Tested194 AID (Sillicon Limited) Lead Free180 AID (Package Limited)
Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRF1407 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
