HGK043N15S Datasheet. Specs and Replacement

Type Designator: HGK043N15S  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 429 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 146 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 24 nS

Cossⓘ - Output Capacitance: 745 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0045 Ohm

Package: TO-247

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HGK043N15S datasheet

 ..1. Size:1049K  cn hunteck
 hgb043n15s hgk043n15s hgp043n15s.pdf pdf_icon

HGK043N15S

, P-1 HGB043N15S HGK043N15S HGP043N15S 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 3.9 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 4.2 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 4.3 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 206 A ID (Sillicon Limited) Lead Free Application Synchronous... See More ⇒

 9.1. Size:1055K  cn hunteck
 hgb045n15s hgk045n15s hgp045n15s.pdf pdf_icon

HGK043N15S

, P-1 HGB045N15S HGK045N15S HGP045N15S 150V N-Ch Power MOSFET Feature 150 V VDS High Speed Power Smooth Switching TO-263 4.1 RDS(on),typ mW Enhanced Body diode dv/dt capability TO-247 4.1 RDS(on),typ mW Enhanced Avalanche Ruggedness TO-220 4.1 RDS(on),typ mW 100% UIS Tested, 100% Rg Tested 194 A ID (Sillicon Limited) Lead Free 180 A ID (Package Limited) ... See More ⇒

Detailed specifications: HGB040N06SL, HGP040N06SL, HGB041N15S, HGB042N10A, HGP042N10A, HGB042N10S, HGP042N10S, HGB043N15S, 20N50, HGP043N15S, HGB045N15S, HGK045N15S, HGP045N15S, HGB046NE6A, HGP046NE6A, HGB046NE6AL, HGP046NE6AL

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