All MOSFET. HGK045N15S Datasheet

 

HGK045N15S MOSFET. Datasheet pdf. Equivalent


   Type Designator: HGK045N15S
   Marking Code: GK045N15S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 429 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 137 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 73 nC
   trⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 773 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm
   Package: TO-247

 HGK045N15S Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HGK045N15S Datasheet (PDF)

 ..1. Size:1055K  cn hunteck
 hgb045n15s hgk045n15s hgp045n15s.pdf

HGK045N15S HGK045N15S

, P-1HGB045N15S HGK045N15SHGP045N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 4.1RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 4.1RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 4.1RDS(on),typ mW 100% UIS Tested, 100% Rg Tested194 AID (Sillicon Limited) Lead Free180 AID (Package Limited)

 9.1. Size:1049K  cn hunteck
 hgb043n15s hgk043n15s hgp043n15s.pdf

HGK045N15S HGK045N15S

, P-1HGB043N15S HGK043N15SHGP043N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 3.9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 4.2RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 4.3RDS(on),typ mW 100% UIS Tested, 100% Rg Tested206 AID (Sillicon Limited) Lead FreeApplication Synchronous

Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , 5N60 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .

History: HGD095NE4SL | SSF18NS60 | SSF10N80A | MTN4800V8 | GSM2333A

 

 
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