All MOSFET. HGK045N15S Datasheet

 

HGK045N15S Datasheet and Replacement


   Type Designator: HGK045N15S
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 429 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 137 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 18 nS
   Cossⓘ - Output Capacitance: 773 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0049 Ohm
   Package: TO-247
 

 HGK045N15S substitution

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HGK045N15S Datasheet (PDF)

 ..1. Size:1055K  cn hunteck
 hgb045n15s hgk045n15s hgp045n15s.pdf pdf_icon

HGK045N15S

, P-1HGB045N15S HGK045N15SHGP045N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 4.1RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 4.1RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 4.1RDS(on),typ mW 100% UIS Tested, 100% Rg Tested194 AID (Sillicon Limited) Lead Free180 AID (Package Limited)

 9.1. Size:1049K  cn hunteck
 hgb043n15s hgk043n15s hgp043n15s.pdf pdf_icon

HGK045N15S

, P-1HGB043N15S HGK043N15SHGP043N15S150V N-Ch Power MOSFETFeature150 VVDS High Speed Power Smooth SwitchingTO-263 3.9RDS(on),typ mW Enhanced Body diode dv/dt capabilityTO-247 4.2RDS(on),typ mW Enhanced Avalanche RuggednessTO-220 4.3RDS(on),typ mW 100% UIS Tested, 100% Rg Tested206 AID (Sillicon Limited) Lead FreeApplication Synchronous

Datasheet: HGB042N10A , HGP042N10A , HGB042N10S , HGP042N10S , HGB043N15S , HGK043N15S , HGP043N15S , HGB045N15S , IRLZ44N , HGP045N15S , HGB046NE6A , HGP046NE6A , HGB046NE6AL , HGP046NE6AL , HGB047N12S , HGP047N12S , HGB049N10S .

History: PHM18NQ15T | IPP60R600E6

Keywords - HGK045N15S MOSFET datasheet

 HGK045N15S cross reference
 HGK045N15S equivalent finder
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