All MOSFET. SDU06N60 Datasheet

 

SDU06N60 MOSFET. Datasheet pdf. Equivalent


   Type Designator: SDU06N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 15 nC
   trⓘ - Rise Time: 16 nS
   Cossⓘ - Output Capacitance: 91 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.48 Ohm
   Package: TO252 DPAK

 SDU06N60 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

SDU06N60 Datasheet (PDF)

 ..1. Size:130K  samhop
 sdu06n60 sdd06n60.pdf

SDU06N60 SDU06N60

GreenProduct SDU/D06N60aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.600V 6A 1.18 @ VGS=10V Suface Mount Package.DGGSSSDU SERIES SDD SERIES SDD SERIESTO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK)

 8.1. Size:131K  samhop
 sdu06n70 sdd06n70.pdf

SDU06N60 SDU06N60

GreenProduct SDU/D06N70SamHop Microelectronics corp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).VDSS ID RDS(ON) () TypRugged and reliable.700V 6A 1.3 @VGS=10V Suface Mount Package.DGGSSSDU SERIES SDD SERIES SDD SERIESTO-252(D-PAK) TO-251S(I-PAK) TO-251L(I-PAK)ORDERI

Datasheet: FDS8958B , SP2013 , SP07N65 , FDS8978 , 2SK3116B , FDS8984 , SDU07N65 , FDS8984F085 , IRFP064N , FDS9400A , FDS9431A , FDS9431AF085 , FDS9926A , FDS9933BZ , FDS9934C , SDU05N04 , FDS9945 .

 

 
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