HTD950P06 PDF and Equivalents Search

 

HTD950P06 PDF Specs and Replacement


   Type Designator: HTD950P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TO-252
 

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HTD950P06 PDF Specs

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HTD950P06

HTD950P06 P-1 60V P-Ch Power MOSFET Feature -60 V VDS High Speed Power Switching, Logic Level 82 RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness 120 RDS(on),typ VGS=-7V m 100% UIS Tested, 100% Rg Tested -10 A ID (Sillicon Limited) Lead Free, Halogen Free Application Load Switches Hard Switching and High Speed Circuit BLDC Motor TO-252 D... See More ⇒

Detailed specifications: HTD300N10 , HTD350C04 , HTD360N10 , HTD410P06 , HTD440P04 , HTD480N06P , HTD600N06 , HTD760P10T , 2SK3568 , HTJ1K0P02 , HTJ1K3P03 , HTJ1K5P06 , HTJ200N02 , HTJ270N03 , HTJ300N02 , HTJ350N03 , HTJ440P02 .

Keywords - HTD950P06 MOSFET specs

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