HTD950P06 Datasheet. Specs and Replacement

Type Designator: HTD950P06  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 27 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 76 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm

Package: TO-252

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HTD950P06 datasheet

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HTD950P06

HTD950P06 P-1 60V P-Ch Power MOSFET Feature -60 V VDS High Speed Power Switching, Logic Level 82 RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness 120 RDS(on),typ VGS=-7V m 100% UIS Tested, 100% Rg Tested -10 A ID (Sillicon Limited) Lead Free, Halogen Free Application Load Switches Hard Switching and High Speed Circuit BLDC Motor TO-252 D... See More ⇒

Detailed specifications: HTD300N10, HTD350C04, HTD360N10, HTD410P06, HTD440P04, HTD480N06P, HTD600N06, HTD760P10T, IRF1407, HTJ1K0P02, HTJ1K3P03, HTJ1K5P06, HTJ200N02, HTJ270N03, HTJ300N02, HTJ350N03, HTJ440P02

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