All MOSFET. HTD950P06 Datasheet

 

HTD950P06 Datasheet and Replacement


   Type Designator: HTD950P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TO-252
      - MOSFET Cross-Reference Search

 

HTD950P06 Datasheet (PDF)

 ..1. Size:583K  cn hunteck
 htd950p06.pdf pdf_icon

HTD950P06

HTD950P06 P-160V P-Ch Power MOSFETFeature-60 VVDS High Speed Power Switching, Logic Level82RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness120RDS(on),typ VGS=-7V m 100% UIS Tested, 100% Rg Tested-10 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Load Switches Hard Switching and High Speed Circuit BLDC MotorTO-252D

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: TK2P60D | IRFBG20

Keywords - HTD950P06 MOSFET datasheet

 HTD950P06 cross reference
 HTD950P06 equivalent finder
 HTD950P06 lookup
 HTD950P06 substitution
 HTD950P06 replacement

 

 
Back to Top

 


 
.