All MOSFET. HTD950P06 Datasheet

 

HTD950P06 Datasheet and Replacement


   Type Designator: HTD950P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TO-252
 

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HTD950P06 Datasheet (PDF)

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HTD950P06

HTD950P06 P-160V P-Ch Power MOSFETFeature-60 VVDS High Speed Power Switching, Logic Level82RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness120RDS(on),typ VGS=-7V m 100% UIS Tested, 100% Rg Tested-10 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Load Switches Hard Switching and High Speed Circuit BLDC MotorTO-252D

Datasheet: HTD300N10 , HTD350C04 , HTD360N10 , HTD410P06 , HTD440P04 , HTD480N06P , HTD600N06 , HTD760P10T , 5N65 , HTJ1K0P02 , HTJ1K3P03 , HTJ1K5P06 , HTJ200N02 , HTJ270N03 , HTJ300N02 , HTJ350N03 , HTJ440P02 .

History: OSG65R080HT3ZF | IXFH42N60P3 | H7N0608LD | 2SK4150 | RTQ035N03FRA | PSMNR70-30YLH | DMP2123L

Keywords - HTD950P06 MOSFET datasheet

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