All MOSFET. HTD950P06 Datasheet

 

HTD950P06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HTD950P06
   Marking Code: TD950P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 27 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 10 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 16.2 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 76 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.095 Ohm
   Package: TO-252

 HTD950P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HTD950P06 Datasheet (PDF)

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 htd950p06.pdf

HTD950P06 HTD950P06

HTD950P06 P-160V P-Ch Power MOSFETFeature-60 VVDS High Speed Power Switching, Logic Level82RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness120RDS(on),typ VGS=-7V m 100% UIS Tested, 100% Rg Tested-10 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Load Switches Hard Switching and High Speed Circuit BLDC MotorTO-252D

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