HTJ200N02 PDF and Equivalents Search

 

HTJ200N02 PDF Specs and Replacement


   Type Designator: HTJ200N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 166 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOT23
 

 HTJ200N02 substitution

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HTJ200N02 PDF Specs

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HTJ200N02

HTJ200N02 P-1 20V N-Ch Power MOSFET Feature 20 V VDS High Speed Power Switching, Logic Level 18 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 6 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial SOT-23 Gate Src Part Number Pac... See More ⇒

Detailed specifications: HTD440P04 , HTD480N06P , HTD600N06 , HTD760P10T , HTD950P06 , HTJ1K0P02 , HTJ1K3P03 , HTJ1K5P06 , SI2302 , HTJ270N03 , HTJ300N02 , HTJ350N03 , HTJ440P02 , HTJ440P02E , HTJ440P03 , HTJ450N02 , HTJ500N03 .

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