HTJ200N02 MOSFET. Datasheet pdf. Equivalent
Type Designator: HTJ200N02
Marking Code: 10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 1.25 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
|Id|ⓘ - Maximum Drain Current: 6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Total Gate Charge (Qg): 8.5 nC
Rise Time (tr): 15 nS
Drain-Source Capacitance (Cd): 166 pF
Maximum Drain-Source On-State Resistance (Rds): 0.02 Ohm
Package: SOT23
HTJ200N02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTJ200N02 Datasheet (PDF)
..1. Size:900K cn hunteck
htj200n02.pdf
htj200n02.pdf
HTJ200N02P-120V N-Ch Power MOSFETFeature20 VVDS High Speed Power Switching, Logic Level18RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness6 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialSOT-23GateSrcPart Number Pac
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