All MOSFET. HTJ200N02 Datasheet

 

HTJ200N02 Datasheet and Replacement


   Type Designator: HTJ200N02
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 166 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOT23
 

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HTJ200N02 Datasheet (PDF)

 ..1. Size:900K  cn hunteck
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HTJ200N02

HTJ200N02P-120V N-Ch Power MOSFETFeature20 VVDS High Speed Power Switching, Logic Level18RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness6 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialSOT-23GateSrcPart Number Pac

Datasheet: HTD440P04 , HTD480N06P , HTD600N06 , HTD760P10T , HTD950P06 , HTJ1K0P02 , HTJ1K3P03 , HTJ1K5P06 , IRFZ46N , HTJ270N03 , HTJ300N02 , HTJ350N03 , HTJ440P02 , HTJ440P02E , HTJ440P03 , HTJ450N02 , HTJ500N03 .

History: IRFS351 | CEB93A3 | SVGP157R5NT | IPA60R280CFD7 | IXFH42N50P2 | SIHFDC20 | P2003EVT

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