All MOSFET. HTJ200N02 Datasheet

 

HTJ200N02 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HTJ200N02
   Marking Code: 10
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 1.25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.2 V
   |Id|ⓘ - Maximum Drain Current: 6 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 8.5 nC
   trⓘ - Rise Time: 15 nS
   Cossⓘ - Output Capacitance: 166 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm
   Package: SOT23

 HTJ200N02 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HTJ200N02 Datasheet (PDF)

 ..1. Size:900K  cn hunteck
 htj200n02.pdf

HTJ200N02 HTJ200N02

HTJ200N02P-120V N-Ch Power MOSFETFeature20 VVDS High Speed Power Switching, Logic Level18RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness6 AID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen FreeApplication Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and InductrialSOT-23GateSrcPart Number Pac

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: BUK9M9R1-40E | IXTH23N25MA

 

 
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