HTJ200N02 Datasheet. Specs and Replacement

Type Designator: HTJ200N02  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 1.25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 166 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.02 Ohm

Package: SOT23

  📄📄 Copy 

HTJ200N02 substitution

- MOSFET ⓘ Cross-Reference Search

 

HTJ200N02 datasheet

 ..1. Size:900K  cn hunteck
 htj200n02.pdf pdf_icon

HTJ200N02

HTJ200N02 P-1 20V N-Ch Power MOSFET Feature 20 V VDS High Speed Power Switching, Logic Level 18 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 6 A ID (Sillicon Limited) 100% UIS Tested, 100% Rg Tested Lead Free, Halogen Free Application Hard Switching and High Speed Circuit Drain DC/DC in Telecoms and Inductrial SOT-23 Gate Src Part Number Pac... See More ⇒

Detailed specifications: HTD440P04, HTD480N06P, HTD600N06, HTD760P10T, HTD950P06, HTJ1K0P02, HTJ1K3P03, HTJ1K5P06, STF13NM60N, HTJ270N03, HTJ300N02, HTJ350N03, HTJ440P02, HTJ440P02E, HTJ440P03, HTJ450N02, HTJ500N03

Keywords - HTJ200N02 MOSFET specs

 HTJ200N02 cross reference

 HTJ200N02 equivalent finder

 HTJ200N02 pdf lookup

 HTJ200N02 substitution

 HTJ200N02 replacement

Can't find your MOSFET? Learn how to find a substitute transistor by analyzing voltage, current and package compatibility