All MOSFET. HTS130N04 Datasheet

 

HTS130N04 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HTS130N04
   Marking Code: TS130N04
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   |Id|ⓘ - Maximum Drain Current: 12 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 24 nC
   trⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 134 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
   Package: SOIC-8

 HTS130N04 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HTS130N04 Datasheet (PDF)

 ..1. Size:824K  cn hunteck
hts130n04.pdf

HTS130N04
HTS130N04

HTS130N04 P-140V N-Ch Power MOSFETFeature40 VVDS High Speed Power Switching, logic level9.6RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability14.5RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness12 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circu

 8.1. Size:668K  cn hunteck
hts130p03z.pdf

HTS130N04
HTS130N04

HTS130P03Z P-130V P-Ch Power MOSFETFeature-30 VVDS High Speed Power Switching, Logic Level9.2RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness10.7RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested-15 AID (Sillicon Limited) Lead Free, Halogen FreeDrainApplicationPin2 Hard Switching and High Speed CircuitSOIC-8 DC/DC in Telecom

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