HTS130N04 Spec and Replacement
Type Designator: HTS130N04
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 12 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 134 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: SOIC-8
HTS130N04 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTS130N04 Specs
hts130n04.pdf
HTS130N04 P-1 40V N-Ch Power MOSFET Feature 40 V VDS High Speed Power Switching, logic level 9.6 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 14.5 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 12 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circu... See More ⇒
hts130p03z.pdf
HTS130P03Z P-1 30V P-Ch Power MOSFET Feature -30 V VDS High Speed Power Switching, Logic Level 9.2 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 10.7 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested -15 A ID (Sillicon Limited) Lead Free, Halogen Free Drain Application Pin2 Hard Switching and High Speed Circuit SOIC-8 DC/DC in Telecom... See More ⇒
Detailed specifications: HTO500P03 , HTP2K1P10 , HTS050N03 , HTS060N03 , HTS075P03 , HTS085P03E , HTS110A03 , HTS120N03 , IRFB4110 , HTS130P03Z , HTS140P03 , HTS180P03T , HTS200N03 , HTS200P03 , HTS210C03 , HTS220C04 , HTS240B03 .
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