HTS130N04 MOSFET. Datasheet pdf. Equivalent
Type Designator: HTS130N04
Marking Code: TS130N04
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 12 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 24 nC
trⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 134 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: SOIC-8
HTS130N04 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTS130N04 Datasheet (PDF)
hts130n04.pdf
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hts130p03z.pdf
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HTS130P03Z P-130V P-Ch Power MOSFETFeature-30 VVDS High Speed Power Switching, Logic Level9.2RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness10.7RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested-15 AID (Sillicon Limited) Lead Free, Halogen FreeDrainApplicationPin2 Hard Switching and High Speed CircuitSOIC-8 DC/DC in Telecom
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