All MOSFET. HTS130P03Z Datasheet


HTS130P03Z MOSFET. Datasheet pdf. Equivalent

   Type Designator: HTS130P03Z
   Marking Code: TS130P03Z
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 1.7 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   Maximum Drain Current |Id|: 15 A
   Maximum Junction Temperature (Tj): 150 °C
   Total Gate Charge (Qg): 48 nC
   Rise Time (tr): 11 nS
   Drain-Source Capacitance (Cd): 410 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.013 Ohm
   Package: SOIC-8

 HTS130P03Z Transistor Equivalent Substitute - MOSFET Cross-Reference Search


HTS130P03Z Datasheet (PDF)

 ..1. Size:668K  cn hunteck

HTS130P03Z HTS130P03Z

HTS130P03Z P-130V P-Ch Power MOSFETFeature-30 VVDS High Speed Power Switching, Logic Level9.2RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness10.7RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested-15 AID (Sillicon Limited) Lead Free, Halogen FreeDrainApplicationPin2 Hard Switching and High Speed CircuitSOIC-8 DC/DC in Telecom

 8.1. Size:824K  cn hunteck

HTS130P03Z HTS130P03Z

HTS130N04 P-140V N-Ch Power MOSFETFeature40 VVDS High Speed Power Switching, logic level9.6RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability14.5RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness12 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circu

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , P55NF06 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .


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