HTS130P03Z Datasheet. Specs and Replacement
Type Designator: HTS130P03Z 📄📄
Type of Transistor: MOSFET
Type of Control Channel: P-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 410 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: SOIC-8
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HTS130P03Z substitution
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HTS130P03Z datasheet
hts130p03z.pdf
HTS130P03Z P-1 30V P-Ch Power MOSFET Feature -30 V VDS High Speed Power Switching, Logic Level 9.2 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 10.7 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested -15 A ID (Sillicon Limited) Lead Free, Halogen Free Drain Application Pin2 Hard Switching and High Speed Circuit SOIC-8 DC/DC in Telecom... See More ⇒
hts130n04.pdf
HTS130N04 P-1 40V N-Ch Power MOSFET Feature 40 V VDS High Speed Power Switching, logic level 9.6 RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability 14.5 RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness 12 A ID 100% UIS Tested, 100% Rg Tested Lead Free Application Synchronous Rectification in SMPS Hard Switching and High Speed Circu... See More ⇒
Detailed specifications: HTP2K1P10, HTS050N03, HTS060N03, HTS075P03, HTS085P03E, HTS110A03, HTS120N03, HTS130N04, IRFP260N, HTS140P03, HTS180P03T, HTS200N03, HTS200P03, HTS210C03, HTS220C04, HTS240B03, HTS280C03
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