HTS130P03Z Datasheet and Replacement
Type Designator: HTS130P03Z
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 1.7 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 15 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 11 nS
Cossⓘ - Output Capacitance: 410 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.013 Ohm
Package: SOIC-8
HTS130P03Z substitution
HTS130P03Z Datasheet (PDF)
hts130p03z.pdf

HTS130P03Z P-130V P-Ch Power MOSFETFeature-30 VVDS High Speed Power Switching, Logic Level9.2RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness10.7RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested-15 AID (Sillicon Limited) Lead Free, Halogen FreeDrainApplicationPin2 Hard Switching and High Speed CircuitSOIC-8 DC/DC in Telecom
hts130n04.pdf

HTS130N04 P-140V N-Ch Power MOSFETFeature40 VVDS High Speed Power Switching, logic level9.6RDS(on),typ VGS=10V m Enhanced Body diode dv/dt capability14.5RDS(on),typ VGS=4.5V m Enhanced Avalanche Ruggedness12 AID 100% UIS Tested, 100% Rg Tested Lead FreeApplication Synchronous Rectification in SMPS Hard Switching and High Speed Circu
Datasheet: HTP2K1P10 , HTS050N03 , HTS060N03 , HTS075P03 , HTS085P03E , HTS110A03 , HTS120N03 , HTS130N04 , IRFP260N , HTS140P03 , HTS180P03T , HTS200N03 , HTS200P03 , HTS210C03 , HTS220C04 , HTS240B03 , HTS280C03 .
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