HTS410P06 MOSFET. Datasheet pdf. Equivalent
Type Designator: HTS410P06
Marking Code: TS410P06
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pdⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
|Id|ⓘ - Maximum Drain Current: 7.5 A
Tjⓘ - Maximum Junction Temperature: 175 °C
Qgⓘ - Total Gate Charge: 45 nC
trⓘ - Rise Time: 15 nS
Cossⓘ - Output Capacitance: 240 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: SOIC-8
HTS410P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HTS410P06 Datasheet (PDF)
hts410p06.pdf
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HTS410P06 P-160V P-Ch Power MOSFETFeature-60 VVDS High Speed Power Switching, Logic Level35RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness45RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested-7.5 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Load Switches Hard Switching and High Speed CircuitSOIC-8 BLDC Motor2
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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