All MOSFET. HTS410P06 Datasheet

 

HTS410P06 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HTS410P06
   Marking Code: TS410P06
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3 V
   Maximum Drain Current |Id|: 7.5 A
   Maximum Junction Temperature (Tj): 175 °C
   Total Gate Charge (Qg): 45 nC
   Rise Time (tr): 15 nS
   Drain-Source Capacitance (Cd): 240 pF
   Maximum Drain-Source On-State Resistance (Rds): 0.04 Ohm
   Package: SOIC-8

 HTS410P06 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HTS410P06 Datasheet (PDF)

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hts410p06.pdf

HTS410P06 HTS410P06

HTS410P06 P-160V P-Ch Power MOSFETFeature-60 VVDS High Speed Power Switching, Logic Level35RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness45RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested-7.5 AID (Sillicon Limited) Lead Free, Halogen FreeApplication Load Switches Hard Switching and High Speed CircuitSOIC-8 BLDC Motor2

Datasheet: P1503HV , P1504BDG , P1504BVG , P1504EDG , P1504EIS , P1504HV , P1510ATG , P1520ED , P55NF06 , P1603BEB , P1603BEBA , P1603BEBB , P1603BV , P1603BVA , P1604ED , P1604ET , P1604ETF .

 

 
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