HTS410P06 Datasheet. Specs and Replacement

Type Designator: HTS410P06  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 7.5 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 15 nS

Cossⓘ - Output Capacitance: 240 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: SOIC-8

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HTS410P06 datasheet

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HTS410P06

HTS410P06 P-1 60V P-Ch Power MOSFET Feature -60 V VDS High Speed Power Switching, Logic Level 35 RDS(on),typ VGS=10V m Enhanced Avalanche Ruggedness 45 RDS(on),typ VGS=4.5V m 100% UIS Tested, 100% Rg Tested -7.5 A ID (Sillicon Limited) Lead Free, Halogen Free Application Load Switches Hard Switching and High Speed Circuit SOIC-8 BLDC Motor 2... See More ⇒

Detailed specifications: HTS140P03, HTS180P03T, HTS200N03, HTS200P03, HTS210C03, HTS220C04, HTS240B03, HTS280C03, AO3400, HTS450P03, HTS500B03, HTS600A06, HTS600C06, SFB021N80C3, SFB021N80I3, SFB024N100C3, SFB025N100C3

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.