All MOSFET. HTS450P03 Datasheet

 

HTS450P03 Datasheet and Replacement


   Type Designator: HTS450P03
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 2.5 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 10 nS
   Cossⓘ - Output Capacitance: 122 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
   Package: SOIC-8
 

 HTS450P03 substitution

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HTS450P03 Datasheet (PDF)

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HTS450P03

HTS450P03 P-130V P-Ch Power MOSFETFeature-30 VVDS High Speed Power Switching, Logic Level37RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness60RDS(on),typ VGS=-5V m 100% UIS Tested, 100% Rg Tested-6 AID (Sillicon Limited) Lead Free, Halogen FreeDrainApplication Hard Switching and High Speed CircuitSOIC-8 DC/DC in Telecoms and Induc

Datasheet: HTS180P03T , HTS200N03 , HTS200P03 , HTS210C03 , HTS220C04 , HTS240B03 , HTS280C03 , HTS410P06 , IRF630 , HTS500B03 , HTS600A06 , HTS600C06 , SFB021N80C3 , SFB021N80I3 , SFB024N100C3 , SFB025N100C3 , SFB027N100C3 .

History: IPB057N06N | IPD65R600E6

Keywords - HTS450P03 MOSFET datasheet

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