HTS450P03 Specs and Replacement
Type Designator: HTS450P03
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2.5 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 10 nS
Cossⓘ - Output Capacitance: 122 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: SOIC-8
HTS450P03 substitution
HTS450P03 datasheet
hts450p03.pdf
HTS450P03 P-1 30V P-Ch Power MOSFET Feature -30 V VDS High Speed Power Switching, Logic Level 37 RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness 60 RDS(on),typ VGS=-5V m 100% UIS Tested, 100% Rg Tested -6 A ID (Sillicon Limited) Lead Free, Halogen Free Drain Application Hard Switching and High Speed Circuit SOIC-8 DC/DC in Telecoms and Induc... See More ⇒
Detailed specifications: HTS180P03T , HTS200N03 , HTS200P03 , HTS210C03 , HTS220C04 , HTS240B03 , HTS280C03 , HTS410P06 , 8205A , HTS500B03 , HTS600A06 , HTS600C06 , SFB021N80C3 , SFB021N80I3 , SFB024N100C3 , SFB025N100C3 , SFB027N100C3 .
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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