HTS450P03 Datasheet. Specs and Replacement

Type Designator: HTS450P03  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 2.5 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 10 nS

Cossⓘ - Output Capacitance: 122 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm

Package: SOIC-8

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HTS450P03 substitution

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HTS450P03 datasheet

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HTS450P03

HTS450P03 P-1 30V P-Ch Power MOSFET Feature -30 V VDS High Speed Power Switching, Logic Level 37 RDS(on),typ VGS=-10V m Enhanced Avalanche Ruggedness 60 RDS(on),typ VGS=-5V m 100% UIS Tested, 100% Rg Tested -6 A ID (Sillicon Limited) Lead Free, Halogen Free Drain Application Hard Switching and High Speed Circuit SOIC-8 DC/DC in Telecoms and Induc... See More ⇒

Detailed specifications: HTS180P03T, HTS200N03, HTS200P03, HTS210C03, HTS220C04, HTS240B03, HTS280C03, HTS410P06, IRF9540, HTS500B03, HTS600A06, HTS600C06, SFB021N80C3, SFB021N80I3, SFB024N100C3, SFB025N100C3, SFB027N100C3

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.