SFB1800N650C2 MOSFET. Datasheet pdf. Equivalent
Type Designator: SFB1800N650C2
Marking Code: 1800N650C2
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 151 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 20 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 23.3 nC
Rise Time (tr): 49.3 nS
Drain-Source Capacitance (Cd): 105 pF
Maximum Drain-Source On-State Resistance (Rds): 0.38 Ohm
Package: TO-263
SFB1800N650C2 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
SFB1800N650C2 Datasheet (PDF)
..1. Size:10381K cn scilicon
sfw1800n650c2 sfp1800n650c2 sfb1800n650c2.pdf
sfw1800n650c2 sfp1800n650c2 sfb1800n650c2.pdf
SFW1800N650C2,SFP1800N650C2,SFB1800N650C2 N-MOSFET 650V, 180m, 60AFeatures Product Summary Low R & FOMDS(on) VDS650VExtremely low switching lossRDS(on) typ. 180mExcellent stability and uniformityID60AEasy to drive100% DVDS TestedApplications100% Avalanche Tested Lighting Hard switching PWM Server power supply ChargerSFW
Datasheet: FQT7N10L , FDP083N15A , FQU10N20C , FDP075N15A , FQU11P06 , FQU12N20 , FDPF085N10A , FQU13N06L , IRF540N , FDB86102LZ , FQU17P06 , FQU1N60C , FDP085N10A , FQU20N06L , FQU2N100 , FQU2N60C , FDMC8030 .
History: NCE65N180D
