All MOSFET. SFB1800N650C2 Datasheet

 

SFB1800N650C2 Datasheet and Replacement


   Type Designator: SFB1800N650C2
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 151 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 20 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 49.3 nS
   Cossⓘ - Output Capacitance: 105 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.38 Ohm
   Package: TO-263
 

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SFB1800N650C2 Datasheet (PDF)

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SFB1800N650C2

SFW1800N650C2,SFP1800N650C2,SFB1800N650C2 N-MOSFET 650V, 180m, 60AFeatures Product Summary Low R & FOMDS(on) VDS650VExtremely low switching lossRDS(on) typ. 180mExcellent stability and uniformityID60AEasy to drive100% DVDS TestedApplications100% Avalanche Tested Lighting Hard switching PWM Server power supply ChargerSFW

Datasheet: SFB087N120C2 , SFB087N80C2 , SFB096N200C3 , SFB107N200C3 , SFB120N120B , SFB120N80A , SFB130N150AC2 , SFB132N200C3 , 60N06 , SFB205N200C3 , SFB347N100C2 , SFB60N100 , SFD025N30C2 , SFD070N60C2 , SFD082N68C2 , SFD085N80C2 , SFD096N60BC2 .

History: WSP4016 | IRFB3806PBF | IRFH5304 | HYG082N03LR1C1 | IPP100N08S2-07 | IRF7343QTR | MTE150P20H8

Keywords - SFB1800N650C2 MOSFET datasheet

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