FQA27N25 Datasheet. Specs and Replacement

Type Designator: FQA27N25  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 210 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 27 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm

Package: TO3PN

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FQA27N25 datasheet

 ..1. Size:813K  fairchild semi
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FQA27N25

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 27A, 250V, RDS(on) = 0.11 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 50 nC) planar stripe, DMOS technology. Low Crss ( typical 45 pF) This advanced technology has been esp... See More ⇒

 ..2. Size:2353K  onsemi
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FQA27N25

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur... See More ⇒

Detailed specifications: FQA140N10, SDF07N65, FQA160N08, FQA170N06, FQA19N60, SDF07N50T, FQA24N60, SDF07N50, 5N60, FQA28N15, FQA30N40, SDF06N60, FQA32N20C, SDF05N50, FQA36P15, FQA40N25, FQA44N30

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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs