All MOSFET. FQA27N25 Datasheet

 

FQA27N25 Datasheet and Replacement


   Type Designator: FQA27N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 210 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 27 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 50 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.11 Ohm
   Package: TO3PN
 

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FQA27N25 Datasheet (PDF)

 ..1. Size:813K  fairchild semi
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FQA27N25

May 2000TMQFETQFETQFETQFET 250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 27A, 250V, RDS(on) = 0.11 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 50 nC)planar stripe, DMOS technology. Low Crss ( typical 45 pF)This advanced technology has been esp

 ..2. Size:2353K  onsemi
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FQA27N25

Is Now Part ofTo learn more about ON Semiconductor, please visit our website at www.onsemi.comPlease note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductors system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

Datasheet: FQA140N10 , SDF07N65 , FQA160N08 , FQA170N06 , FQA19N60 , SDF07N50T , FQA24N60 , SDF07N50 , P0903BDG , FQA28N15 , FQA30N40 , SDF06N60 , FQA32N20C , SDF05N50 , FQA36P15 , FQA40N25 , FQA44N30 .

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