NCE4435X Specs and Replacement
Type Designator: NCE4435X
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 9.5 nS
Cossⓘ - Output Capacitance: 186 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SOP8
NCE4435X substitution
NCE4435X datasheet
nce4435.pdf
Pb Free Product NCE4435 NCE P-Channel Enhancement Mode Power MOSFET D Description The NCE4435 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S General Features Schematic diagram VDS = -30V,ID = -9.1A RDS(ON) ... See More ⇒
nce4435b.pdf
http //www.ncepower.com NCE4435B NCE P-Channel Enhancement Mode Power MOSFET Description The NCE4435B uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features V = -30V,I = -12A Schematic diagram DS D R ... See More ⇒
Detailed specifications: NCE40P06S , NCE40P15Q , NCE40P20Q , NCE40P20Q1 , NCE40P25G , NCE40P30K , NCE40P40D , NCE4435B , IRF740 , NCE4525 , NCE4528K , NCE4555K , NCE4558K , NCE4606B , NCE5015S , NCE5020Q , NCE5055K .
Keywords - NCE4435X MOSFET specs
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