NCE4435X Datasheet. Specs and Replacement

Type Designator: NCE4435X  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: P-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 3 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 10 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 9.5 nS

Cossⓘ - Output Capacitance: 186 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: SOP8

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NCE4435X datasheet

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NCE4435X

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NCE4435X

Pb Free Product NCE4435 NCE P-Channel Enhancement Mode Power MOSFET D Description The NCE4435 uses advanced trench technology to provide G excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. S General Features Schematic diagram VDS = -30V,ID = -9.1A RDS(ON) ... See More ⇒

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NCE4435X

http //www.ncepower.com NCE4435B NCE P-Channel Enhancement Mode Power MOSFET Description The NCE4435B uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. General Features V = -30V,I = -12A Schematic diagram DS D R ... See More ⇒

Detailed specifications: NCE40P06S, NCE40P15Q, NCE40P20Q, NCE40P20Q1, NCE40P25G, NCE40P30K, NCE40P40D, NCE4435B, IRF840, NCE4525, NCE4528K, NCE4555K, NCE4558K, NCE4606B, NCE5015S, NCE5020Q, NCE5055K

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