NCE4435X Datasheet and Replacement
Type Designator: NCE4435X
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Pd ⓘ - Maximum Power Dissipation: 3 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 10 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 9.5 nS
Cossⓘ - Output Capacitance: 186 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: SOP8
NCE4435X substitution
NCE4435X Datasheet (PDF)
nce4435x.pdf
http://www.ncepower.com NCE4435XNCE P-Channel Enhancement Mode Power MOSFET Description The NCE4435X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -30V,ID = -10A RDS(ON)
nce4435.pdf
Pb Free ProductNCE4435NCE P-Channel Enhancement Mode Power MOSFET DDescription The NCE4435 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SGeneral Features Schematic diagram VDS = -30V,ID = -9.1A RDS(ON)
nce4435b.pdf
http://www.ncepower.comNCE4435BNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4435B uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 4.5V. This device is suitable for use as aload switch or in PWM applications.General Features V = -30V,I = -12A Schematic diagramDS DR
Datasheet: NCE40P06S , NCE40P15Q , NCE40P20Q , NCE40P20Q1 , NCE40P25G , NCE40P30K , NCE40P40D , NCE4435B , IRF740 , NCE4525 , NCE4528K , NCE4555K , NCE4558K , NCE4606B , NCE5015S , NCE5020Q , NCE5055K .
History: NCEP078N10AK
Keywords - NCE4435X MOSFET datasheet
 NCE4435X cross reference
 NCE4435X equivalent finder
 NCE4435X lookup
 NCE4435X substitution
 NCE4435X replacement
History: NCEP078N10AK
 
 
 
 
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