All MOSFET. NCE4435X Datasheet

 

NCE4435X Datasheet and Replacement


   Type Designator: NCE4435X
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pd ⓘ - Maximum Power Dissipation: 3 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.2 V
   |Id| ⓘ - Maximum Drain Current: 10 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 32.2 nC
   tr ⓘ - Rise Time: 9.5 nS
   Cossⓘ - Output Capacitance: 186 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: SOP8
 

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NCE4435X Datasheet (PDF)

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NCE4435X

http://www.ncepower.com NCE4435XNCE P-Channel Enhancement Mode Power MOSFET Description The NCE4435X uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM applications. Schematic diagram General Features VDS = -30V,ID = -10A RDS(ON)

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NCE4435X

Pb Free ProductNCE4435NCE P-Channel Enhancement Mode Power MOSFET DDescription The NCE4435 uses advanced trench technology to provide Gexcellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. SGeneral Features Schematic diagram VDS = -30V,ID = -9.1A RDS(ON)

 7.2. Size:709K  ncepower
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NCE4435X

http://www.ncepower.comNCE4435BNCE P-Channel Enhancement Mode Power MOSFETDescriptionThe NCE4435B uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 4.5V. This device is suitable for use as aload switch or in PWM applications.General Features V = -30V,I = -12A Schematic diagramDS DR

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , 2SK3568 , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

History: NCE40H29D

Keywords - NCE4435X MOSFET datasheet

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