All MOSFET. FQA55N25 Datasheet

 

FQA55N25 Datasheet and Replacement


   Type Designator: FQA55N25
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 310 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
   Package: TO3PN
 

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FQA55N25 Datasheet (PDF)

 ..1. Size:863K  fairchild semi
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FQA55N25

May 2000TMQFETQFETQFETQFET 250V N-ChanneI MOSFETGeneraI Description FeaturesThese N-Channel enhancement mode power field effect 55A, 250V, RDS(on) = 0.04 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 140 nC)planar stripe, DMOS technology. Low Crss ( typical 125 pF)This advanced technology has been e

 8.1. Size:661K  fairchild semi
 fqa55n10.pdf pdf_icon

FQA55N25

August 2000TMQFETQFETQFETQFETFQA55N10100V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 61A, 100V, RDS(on) = 0.026 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 75 nC)planar stripe, DMOS technology. Low Crss ( typical 130 pF)This advanced technology has been

Datasheet: FQA30N40 , SDF06N60 , FQA32N20C , SDF05N50 , FQA36P15 , FQA40N25 , FQA44N30 , FQA46N15 , 4N60 , FQA62N25C , FQA65N20 , SDF05N40T , FQA6N90CF109 , FQA70N10 , SDF04N65 , FQA70N15 , FQA7N80CF109 .

History: CEM2939

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