FQA55N25 Datasheet. Specs and Replacement

Type Designator: FQA55N25  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 310 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 55 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm

Package: TO3PN

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FQA55N25 datasheet

 ..1. Size:863K  fairchild semi
 fqa55n25.pdf pdf_icon

FQA55N25

May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 55A, 250V, RDS(on) = 0.04 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 140 nC) planar stripe, DMOS technology. Low Crss ( typical 125 pF) This advanced technology has been e... See More ⇒

 8.1. Size:661K  fairchild semi
 fqa55n10.pdf pdf_icon

FQA55N25

August 2000 TM QFET QFET QFET QFET FQA55N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 61A, 100V, RDS(on) = 0.026 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 75 nC) planar stripe, DMOS technology. Low Crss ( typical 130 pF) This advanced technology has been... See More ⇒

Detailed specifications: FQA30N40, SDF06N60, FQA32N20C, SDF05N50, FQA36P15, FQA40N25, FQA44N30, FQA46N15, 4N60, FQA62N25C, FQA65N20, SDF05N40T, FQA6N90CF109, FQA70N10, SDF04N65, FQA70N15, FQA7N80CF109

Keywords - FQA55N25 MOSFET specs

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.