FQA55N25 Specs and Replacement
Type Designator: FQA55N25
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 310 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.04 Ohm
Package: TO3PN
FQA55N25 substitution
FQA55N25 datasheet
fqa55n25.pdf
May 2000 TM QFET QFET QFET QFET 250V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 55A, 250V, RDS(on) = 0.04 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 140 nC) planar stripe, DMOS technology. Low Crss ( typical 125 pF) This advanced technology has been e... See More ⇒
fqa55n10.pdf
August 2000 TM QFET QFET QFET QFET FQA55N10 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 61A, 100V, RDS(on) = 0.026 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 75 nC) planar stripe, DMOS technology. Low Crss ( typical 130 pF) This advanced technology has been... See More ⇒
Detailed specifications: FQA30N40 , SDF06N60 , FQA32N20C , SDF05N50 , FQA36P15 , FQA40N25 , FQA44N30 , FQA46N15 , AO3407 , FQA62N25C , FQA65N20 , SDF05N40T , FQA6N90CF109 , FQA70N10 , SDF04N65 , FQA70N15 , FQA7N80CF109 .
Keywords - FQA55N25 MOSFET specs
FQA55N25 cross reference
FQA55N25 equivalent finder
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FQA55N25 substitution
FQA55N25 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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