All MOSFET. FQA62N25C Datasheet

 

FQA62N25C MOSFET. Datasheet pdf. Equivalent

Type Designator: FQA62N25C

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 298 W

Maximum Drain-Source Voltage |Vds|: 250 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 62 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 100 nC

Maximum Drain-Source On-State Resistance (Rds): 0.035 Ohm

Package: TO3PN

FQA62N25C Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQA62N25C Datasheet (PDF)

1.1. fqa62n25c.pdf Size:597K _fairchild_semi

FQA62N25C
FQA62N25C

® QFET FQA62N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 62A, 250V, RDS(on) = 0.035Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 100 nC) planar, DMOS technology. • Low Crss ( typical 63.5 pF) This advanced technology has been especially tailored to • Fast s

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