FQA62N25C MOSFET. Datasheet pdf. Equivalent
Type Designator: FQA62N25C
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 298 W
Maximum Drain-Source Voltage |Vds|: 250 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 62 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 100 nC
Maximum Drain-Source On-State Resistance (Rds): 0.035 Ohm
Package: TO3PN
FQA62N25C Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQA62N25C Datasheet (PDF)
1.1. fqa62n25c.pdf 
Size:597K _fairchild_semi
QFET FQA62N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 62A, 250V, RDS(on) = 0.035? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 100 nC) planar, DMOS technology. Low Crss ( typical 63.5 pF) This advanced technology has been especially tailored to Fast switching minimi
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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