All MOSFET. FQA62N25C Datasheet

 

FQA62N25C Datasheet and Replacement


   Type Designator: FQA62N25C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 298 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 250 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 62 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 100 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: TO3PN
 

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FQA62N25C Datasheet (PDF)

 ..1. Size:597K  fairchild semi
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FQA62N25C

QFETFQA62N25C250V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 62A, 250V, RDS(on) = 0.035 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 100 nC)planar, DMOS technology. Low Crss ( typical 63.5 pF)This advanced technology has been especially tailored to Fast s

Datasheet: SDF06N60 , FQA32N20C , SDF05N50 , FQA36P15 , FQA40N25 , FQA44N30 , FQA46N15 , FQA55N25 , 75N75 , FQA65N20 , SDF05N40T , FQA6N90CF109 , FQA70N10 , SDF04N65 , FQA70N15 , FQA7N80CF109 , SDF04N60 .

History: HUF76113SK8

Keywords - FQA62N25C MOSFET datasheet

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