FQA62N25C Datasheet. Specs and Replacement

Type Designator: FQA62N25C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 298 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 250 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 62 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm

Package: TO3PN

  📄📄 Copy 

FQA62N25C substitution

- MOSFET ⓘ Cross-Reference Search

 

FQA62N25C datasheet

 ..1. Size:597K  fairchild semi
 fqa62n25c.pdf pdf_icon

FQA62N25C

QFET FQA62N25C 250V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 62A, 250V, RDS(on) = 0.035 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 100 nC) planar, DMOS technology. Low Crss ( typical 63.5 pF) This advanced technology has been especially tailored to Fast s... See More ⇒

Detailed specifications: SDF06N60, FQA32N20C, SDF05N50, FQA36P15, FQA40N25, FQA44N30, FQA46N15, FQA55N25, STP65NF06, FQA65N20, SDF05N40T, FQA6N90CF109, FQA70N10, SDF04N65, FQA70N15, FQA7N80CF109, SDF04N60

Keywords - FQA62N25C MOSFET specs

 FQA62N25C cross reference

 FQA62N25C equivalent finder

 FQA62N25C pdf lookup

 FQA62N25C substitution

 FQA62N25C replacement

Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.