All MOSFET. FQA65N20 Datasheet

 

FQA65N20 Datasheet and Replacement


   Type Designator: FQA65N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 310 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   Qg ⓘ - Total Gate Charge: 170 nC
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
   Package: TO3PN
 

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FQA65N20 Datasheet (PDF)

 ..1. Size:663K  fairchild semi
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FQA65N20

August 2001TMQFETFQA65N20200V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 65A, 200V, RDS(on) = 0.032 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 170 nC)planar stripe, DMOS technology. Low Crss ( typical 90 pF)This advanced technology has been especially tailor

 8.1. Size:651K  fairchild semi
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FQA65N20

May 2001TMQFETFQA65N0660V N-Channel MOSFETGeneral Description FeaturesThese N-Channel enhancement mode power field effect 72A, 60V, RDS(on) = 0.016 @VGS = 10 Vtransistors are produced using Fairchilds proprietary, Low gate charge ( typical 48 nC)planar stripe, DMOS technology. Low Crss ( typical 100 pF)This advanced technology has been especially tailored to

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