FQA65N20 Datasheet. Specs and Replacement

Type Designator: FQA65N20  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 310 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 65 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm

Package: TO3PN

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FQA65N20 datasheet

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FQA65N20

August 2001 TM QFET FQA65N20 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 65A, 200V, RDS(on) = 0.032 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 170 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has been especially tailor... See More ⇒

 8.1. Size:651K  fairchild semi
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FQA65N20

May 2001 TM QFET FQA65N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 72A, 60V, RDS(on) = 0.016 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 100 pF) This advanced technology has been especially tailored to... See More ⇒

Detailed specifications: FQA32N20C, SDF05N50, FQA36P15, FQA40N25, FQA44N30, FQA46N15, FQA55N25, FQA62N25C, IRF1405, SDF05N40T, FQA6N90CF109, FQA70N10, SDF04N65, FQA70N15, FQA7N80CF109, SDF04N60, FQA8N100C

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