FQA65N20 MOSFET Datasheet: N-Ch, 200V, 65A. Full specification with pinout and replacement list

FQA65N20 Specs and Replacement

   Type Designator: FQA65N20
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel

Absolute Maximum Ratings

   Pd ⓘ - Maximum Power Dissipation: 310 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 65 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.032 Ohm
Package: TO3PN

FQA65N20 substitution

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FQA65N20 datasheet

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August 2001 TM QFET FQA65N20 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 65A, 200V, RDS(on) = 0.032 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 170 nC) planar stripe, DMOS technology. Low Crss ( typical 90 pF) This advanced technology has been especially tailor... See More ⇒

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May 2001 TM QFET FQA65N06 60V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 72A, 60V, RDS(on) = 0.016 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 100 pF) This advanced technology has been especially tailored to... See More ⇒

Detailed specifications: FQA32N20C , SDF05N50 , FQA36P15 , FQA40N25 , FQA44N30 , FQA46N15 , FQA55N25 , FQA62N25C , 20N50 , SDF05N40T , FQA6N90CF109 , FQA70N10 , SDF04N65 , FQA70N15 , FQA7N80CF109 , SDF04N60 , FQA8N100C .