BRCS200N10SZC Datasheet and Replacement
Type Designator: BRCS200N10SZC
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 35 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id| ⓘ - Maximum Drain Current: 28 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Qg ⓘ - Total Gate Charge: 17 nC
tr ⓘ - Rise Time: 3.2 nS
Cossⓘ - Output Capacitance: 475 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.028 Ohm
Package: PDFN5X6
BRCS200N10SZC Datasheet (PDF)
brcs200n10szc.pdf

BRCS200N10SZC Rev.A Jun.-2022 DATA SHEET / Descriptions PDFN 56 N N-Channel MOSFET in a PDFN 56 Plastic Package . / Features VDS (V) = 100V ID =28A (VGS = 20V) RDS(ON)@10V20mR(Typ.18mR) HF Product. / Applications DC/DC AC/DC DC/DC
brcs200n04zb.pdf

BRCS200N04ZB Rev.B Jun.-2021 DATA SHEET / Descriptions DFN 3*3A-8L N MOS N-Channel Enhancement Mode Field Effect Transistor in a DFN 3*3A-8L Plastic Package. / Features VDS (V) = 40V ID = 12 A (VGS = 20V) HF Product. / Applications DC/DC
brcs200n04dsc.pdf

BRCS200N04DSC Rev.A May.-2020 DATA SHEET / Descriptions SOP-8 N Power Trench MOS Dual N-Channel Power Trench MOSFET in a SOP-8 Plastic Package. / Features Low RDS(ON),Low gate charge, use for a wide range of power conversion applications
brcs200n03yn.pdf

BRCS200N03YN Rev.A Jul.-2022 DATA SHEET / Descriptions DFN 22C-6L N+N MOS Double N+N-CHANNEL MOSFET in a DFN 22C-6L Plastic Package. / Features VDS (V) = 30V ID = 6.3A (VGS = 20V) HF Product. / Applications Battery protection swit
Datasheet: FMM50-025TF , FMM60-02TF , FMM75-01F , FMP26-02P , FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , RFP50N06 , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , GMM3x180-004X2-SMD , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL .
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