BRGN250N65YK Datasheet. Specs and Replacement

Type Designator: BRGN250N65YK  📄📄 

Type of Transistor: GaN-MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 21 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V

|Id| ⓘ - Maximum Drain Current: 6.5 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 4 nS

Cossⓘ - Output Capacitance: 16 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm

Package: DFN8X8-3L

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BRGN250N65YK datasheet

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BRGN250N65YK

BRGN250N65YK Rev.B Jun.-2022 DATA SHEET / Descriptions DFN8 8-3L 650V GaN 650V GaN Enhancement-mode Power Transistor in a DFN8 8-3L Plastic Package . / Features Low R to minimize conductive loss Low gate cha... See More ⇒

Detailed specifications: BRFL24N50, BRFL4N65S, BRFL60R190C, BRFL65R160C, BRFL65R380C, BRFL70R360C, BRFL7N65S, BRFL8N65, AON6380, BRI2N70, BRI4N70, BRI50N06, BRI5N65, BRI65R380C, BRI740, BRI7N60, BRI7N65

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