All MOSFET. BRGN250N65YK Datasheet

 

BRGN250N65YK Datasheet and Replacement


   Type Designator: BRGN250N65YK
   Type of Transistor: GaN-MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 21 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: DFN8X8-3L
 
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BRGN250N65YK Datasheet (PDF)

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BRGN250N65YK

BRGN250N65YK Rev.B Jun.-2022 DATA SHEET / Descriptions DFN88-3L 650V GaN 650V GaN Enhancement-mode Power Transistor in a DFN88-3L Plastic Package . / Features Low R to minimize conductive lossLow gate cha

Datasheet: BRFL24N50 , BRFL4N65S , BRFL60R190C , BRFL65R160C , BRFL65R380C , BRFL70R360C , BRFL7N65S , BRFL8N65 , RFP50N06 , BRI2N70 , BRI4N70 , BRI50N06 , BRI5N65 , BRI65R380C , BRI740 , BRI7N60 , BRI7N65 .

History: IPD90N08S4-05

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