All MOSFET. BRGN250N65YK Datasheet

 

BRGN250N65YK MOSFET. Datasheet pdf. Equivalent


   Type Designator: BRGN250N65YK
   Type of Transistor: GaN-MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 21 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.9 V
   |Id|ⓘ - Maximum Drain Current: 6.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 9.5 nC
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: DFN8X8-3L

 BRGN250N65YK Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

BRGN250N65YK Datasheet (PDF)

 ..1. Size:495K  blue-rocket-elect
 brgn250n65yk.pdf

BRGN250N65YK BRGN250N65YK

BRGN250N65YK Rev.B Jun.-2022 DATA SHEET / Descriptions DFN88-3L 650V GaN 650V GaN Enhancement-mode Power Transistor in a DFN88-3L Plastic Package . / Features Low R to minimize conductive lossLow gate cha

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRFP250N , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
Back to Top