BRGN250N65YK Datasheet and Replacement
Type Designator: BRGN250N65YK
Type of Transistor: GaN-MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 21 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
|Id| ⓘ - Maximum Drain Current: 6.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 4 nS
Cossⓘ - Output Capacitance: 16 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
Package: DFN8X8-3L
BRGN250N65YK substitution
BRGN250N65YK Datasheet (PDF)
brgn250n65yk.pdf

BRGN250N65YK Rev.B Jun.-2022 DATA SHEET / Descriptions DFN88-3L 650V GaN 650V GaN Enhancement-mode Power Transistor in a DFN88-3L Plastic Package . / Features Low R to minimize conductive lossLow gate cha
Datasheet: BRFL24N50 , BRFL4N65S , BRFL60R190C , BRFL65R160C , BRFL65R380C , BRFL70R360C , BRFL7N65S , BRFL8N65 , RFP50N06 , BRI2N70 , BRI4N70 , BRI50N06 , BRI5N65 , BRI65R380C , BRI740 , BRI7N60 , BRI7N65 .
History: WML05N105C2
Keywords - BRGN250N65YK MOSFET datasheet
BRGN250N65YK cross reference
BRGN250N65YK equivalent finder
BRGN250N65YK lookup
BRGN250N65YK substitution
BRGN250N65YK replacement
History: WML05N105C2



LIST
Last Update
MOSFET: JMSL0406AKQ | JMSL0406AK | JMSL0406AGQ | JMSL0406AGDQ | JMSL0406AGD | JMSL04060GDQ | JMSL04055UQ | JMSL04055GQ | JMSL0403PU | JMSL0403PK | JMSL0403PGQ | JMSL0403PG | JMSL0403AU | JMSL0403AGQ | JMSL0403AG | JMTQ90N02A
Popular searches
d667 | a965 transistor | hy3210 | d313 transistor equivalent | 2sb827 | c5200 datasheet | 2n2614 | 2sa777 replacement