All MOSFET. BRGN250N65YK Datasheet

 

BRGN250N65YK Datasheet and Replacement


   Type Designator: BRGN250N65YK
   Type of Transistor: GaN-MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 21 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
   |Id|ⓘ - Maximum Drain Current: 6.5 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: DFN8X8-3L
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BRGN250N65YK Datasheet (PDF)

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BRGN250N65YK

BRGN250N65YK Rev.B Jun.-2022 DATA SHEET / Descriptions DFN88-3L 650V GaN 650V GaN Enhancement-mode Power Transistor in a DFN88-3L Plastic Package . / Features Low R to minimize conductive lossLow gate cha

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: IRF6201 | AUIRF3808S | AO4406A | GSM4936S | 2SK1993 | P1060AT | ATM2N65TE

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