All MOSFET. BRGN250N65YK Datasheet

 

BRGN250N65YK Datasheet and Replacement


   Type Designator: BRGN250N65YK
   Type of Transistor: GaN-MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 21 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 18 V
   |Id| ⓘ - Maximum Drain Current: 6.5 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 4 nS
   Cossⓘ - Output Capacitance: 16 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.5 Ohm
   Package: DFN8X8-3L
 

 BRGN250N65YK substitution

   - MOSFET ⓘ Cross-Reference Search

 

BRGN250N65YK Datasheet (PDF)

 ..1. Size:495K  blue-rocket-elect
 brgn250n65yk.pdf pdf_icon

BRGN250N65YK

BRGN250N65YK Rev.B Jun.-2022 DATA SHEET / Descriptions DFN88-3L 650V GaN 650V GaN Enhancement-mode Power Transistor in a DFN88-3L Plastic Package . / Features Low R to minimize conductive lossLow gate cha

Datasheet: BRFL24N50 , BRFL4N65S , BRFL60R190C , BRFL65R160C , BRFL65R380C , BRFL70R360C , BRFL7N65S , BRFL8N65 , RFP50N06 , BRI2N70 , BRI4N70 , BRI50N06 , BRI5N65 , BRI65R380C , BRI740 , BRI7N60 , BRI7N65 .

History: WML05N105C2

Keywords - BRGN250N65YK MOSFET datasheet

 BRGN250N65YK cross reference
 BRGN250N65YK equivalent finder
 BRGN250N65YK lookup
 BRGN250N65YK substitution
 BRGN250N65YK replacement

 

 
Back to Top

 


 
.