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RU17P6C PDF Specs and Replacement


   Type Designator: RU17P6C
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel

Absolute Maximum Ratings


   Pd ⓘ - Maximum Power Dissipation: 1.1 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 18 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id| ⓘ - Maximum Drain Current: 6 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics


   tr ⓘ - Rise Time: 35 nS
   Cossⓘ - Output Capacitance: 98 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.035 Ohm
   Package: SOT23
 

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RU17P6C PDF Specs

 ..1. Size:421K  ruichips
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RU17P6C

RU17P6C P-Channel Advanced Power MOSFET Features Pin Description -18V/-6A, RDS (ON) =21m (Typ.)@VGS=-4.5V D RDS (ON) =26m (Typ.)@VGS=-2.5V Uses Ruichips Proprietary New TrenchTM Technology Low On-Resistance E ti l d /dt bilit Exceptional dv/dt capability Low Gate Charge Minimize Switching Loss G Lead Free and Green Devices (RoHS Compliant) S SOT23-3 D... See More ⇒

 9.1. Size:279K  ruichips
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RU17P6C

RU17P12C P-Channel Advanced Power MOSFET Features Pin Description -18V/-12A, RDS (ON) =12m (Typ.)@VGS=-4.5V D RDS (ON) =15m (Typ.)@VGS=-2.5V Uses Ruichips Proprietary New TrenchTM Technology Low On-Resistance Exceptional dv/dt capability Low Gate Charge Minimize Switching Loss G Lead Free and Green Devices (RoHS Compliant) S SOT23-3 D Applications ... See More ⇒

Detailed specifications: BRI7N65 , BRU24N50 , BRU26N50 , BSS123K2 , RU12N65P , RU13N65R , RU15P12C , RU17P12C , IRFP250 , RU18N65P , RU205C , RU2060L , RU20N65P , RU20N65R , RU20P3C , RU2N65P , RU30110M .

History: MTN5N50J3 | BSB008NE2LX

Keywords - RU17P6C MOSFET specs

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.

 

 
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