All MOSFET. RU9N65P Datasheet

 

RU9N65P MOSFET. Datasheet pdf. Equivalent


   Type Designator: RU9N65P
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 43 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 9 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 5 nC
   trⓘ - Rise Time: 80 nS
   Cossⓘ - Output Capacitance: 170 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
   Package: TO220F

 RU9N65P Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

RU9N65P Datasheet (PDF)

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 ru9n65p.pdf

RU9N65P RU9N65P

RU9N65PN-Channel Advanced Power MOSFETFeatures Pin Description 650V/9A, RDS (ON) =750m(Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant)GDSTO220FDDDDDApplications Dpp D AC/DC Power Conversion in

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History: VBZE5N20 | CS24N50ANHD | BUK7Y28-75B | IRFS451

 

 
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