RU9N65P Specs and Replacement
Type Designator: RU9N65P
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 43 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 9 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 80 nS
Cossⓘ - Output Capacitance: 170 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm
Package: TO220F
RU9N65P substitution
RU9N65P datasheet
ru9n65p.pdf
RU9N65P N-Channel Advanced Power MOSFET Features Pin Description 650V/9A, RDS (ON) =750m (Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant) GD S TO220F D D D D D Applications D pp D AC/DC Power Conversion in... See More ⇒
Detailed specifications: RU40L60L , RU40L60M , RU4N65P , RU6035M3 , RU6051H , RU65110R , RU7N65L , RU82100R , AO4407A , RUH008N15M-C , RUH120N140R , RUH120N140S , RUH120N140T , RUH120N35L , RUH120N35M3 , RUH120N70R , RUH120N81L .
Keywords - RU9N65P MOSFET specs
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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
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