RU9N65P Datasheet. Specs and Replacement

Type Designator: RU9N65P  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 43 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 9 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 80 nS

Cossⓘ - Output Capacitance: 170 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1 Ohm

Package: TO220F

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RU9N65P datasheet

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RU9N65P

RU9N65P N-Channel Advanced Power MOSFET Features Pin Description 650V/9A, RDS (ON) =750m (Typ.)@VGS=10V Low Reverse Transfer Ultra Low Gate Charge 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant) Lead Free and Green Devices Available (RoHS Compliant) GD S TO220F D D D D D Applications D pp D AC/DC Power Conversion in... See More ⇒

Detailed specifications: RU40L60L, RU40L60M, RU4N65P, RU6035M3, RU6051H, RU65110R, RU7N65L, RU82100R, IRF830, RUH008N15M-C, RUH120N140R, RUH120N140S, RUH120N140T, RUH120N35L, RUH120N35M3, RUH120N70R, RUH120N81L

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.