H0110K Specs and Replacement
Type Designator: H0110K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 9.6 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 7.4 nS
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: TO-252
H0110K substitution
H0110K datasheet
h0110d h0110k.pdf
H0110D/K N-Channel MOSFET 10A,100V, N H H0110D DPAK NCE0110K HAOHAI 2500Pcs 2500Pcs H0110K TO-252 H0110D Series Pin Assignment ID=9.6A DESCRIPTION VDS=100V The H0110D H0110K RDS(on)=105m uses advanced trench t... See More ⇒
Detailed specifications: RUH85120M-C , RUH85120S , RUH85150R , RUH85210R , RUH85230S , RUH85350T , RUQ4040M2 , H0110D , NCEP15T14 , H01H14B , H01H14D , H01P13D , H01P13K , H10N60P , H10N65P , H12N60P , H12N65P .
Keywords - H0110K MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
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