H0110K MOSFET. Datasheet pdf. Equivalent
Type Designator: H0110K
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
|Id|ⓘ - Maximum Drain Current: 9.6 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 15.5 nC
trⓘ - Rise Time: 7.4 nS
Cossⓘ - Output Capacitance: 120 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm
Package: TO-252
H0110K Transistor Equivalent Substitute - MOSFET Cross-Reference Search
H0110K Datasheet (PDF)
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h0110d h0110k.pdf
h0110d h0110k.pdf
H0110D/KN-Channel MOSFET10A,100V, N H H0110D DPAKNCE0110K HAOHAI 2500Pcs 2500PcsH0110K TO-252H0110D Series Pin AssignmentID=9.6ADESCRIPTIONVDS=100VThe H0110DH0110KRDS(on)=105muses advanced trench t
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