H0110K Datasheet. Specs and Replacement

Type Designator: H0110K  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 30 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 9.6 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 7.4 nS

Cossⓘ - Output Capacitance: 120 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.14 Ohm

Package: TO-252

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H0110K datasheet

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 h0110d h0110k.pdf pdf_icon

H0110K

H0110D/K N-Channel MOSFET 10A,100V, N H H0110D DPAK NCE0110K HAOHAI 2500Pcs 2500Pcs H0110K TO-252 H0110D Series Pin Assignment ID=9.6A DESCRIPTION VDS=100V The H0110D H0110K RDS(on)=105m uses advanced trench t... See More ⇒

Detailed specifications: RUH85120M-C, RUH85120S, RUH85150R, RUH85210R, RUH85230S, RUH85350T, RUQ4040M2, H0110D, CS150N03A8, H01H14B, H01H14D, H01P13D, H01P13K, H10N60P, H10N65P, H12N60P, H12N65P

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