All MOSFET. HPD160N06STA Datasheet

 

HPD160N06STA MOSFET. Datasheet pdf. Equivalent


   Type Designator: HPD160N06STA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
   |Id|ⓘ - Maximum Drain Current: 50 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 30 nC
   trⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO-252

 HPD160N06STA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HPD160N06STA Datasheet (PDF)

 ..1. Size:424K  cn haohai electr
 hpd160n06sta.pdf

HPD160N06STA HPD160N06STA

HAOHAI ELECTRONICS HPD160N06STAProduct Summary50A, 60VVDS60 VN-CHANNEL POWER MOSFETRDS(ON) Max.16 m FeaturesAdvanced process technologyID50 AUltra low On-Resistance150 Operating TemperatureFast Switching2.DrainRepetitive Avalanche Allowed up to TjmaxLead-Free D Mechanical DataCaseTO-252Case MaterialMolded PlasticGreenMolding1.

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