HPD160N06STA MOSFET. Datasheet pdf. Equivalent
Type Designator: HPD160N06STA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pdⓘ - Maximum Power Dissipation: 130 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5 V
|Id|ⓘ - Maximum Drain Current: 50 A
Tjⓘ - Maximum Junction Temperature: 150 °C
Qgⓘ - Total Gate Charge: 30 nC
trⓘ - Rise Time: 100 nS
Cossⓘ - Output Capacitance: 430 pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
Package: TO-252
HPD160N06STA Transistor Equivalent Substitute - MOSFET Cross-Reference Search
HPD160N06STA Datasheet (PDF)
hpd160n06sta.pdf
![](https://alltransistors.com/ad/pdf_icon.gif)
HAOHAI ELECTRONICS HPD160N06STAProduct Summary50A, 60VVDS60 VN-CHANNEL POWER MOSFETRDS(ON) Max.16 m FeaturesAdvanced process technologyID50 AUltra low On-Resistance150 Operating TemperatureFast Switching2.DrainRepetitive Avalanche Allowed up to TjmaxLead-Free D Mechanical DataCaseTO-252Case MaterialMolded PlasticGreenMolding1.
Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
![HPD160N06STA](https://alltransistors.com/images/us.png)
![HPD160N06STA](https://alltransistors.com/images/es.png)
![HPD160N06STA](https://alltransistors.com/images/ru.png)
LIST
Last Update
MOSFET: DAMIA1100N100 | DAMI660N60 | DAMI560N100 | DAMI500N60 | DAMI450N100 | DAMI360N150 | DAMI330N60 | DAMI320N100 | DAMI300N150 | DAMI280N200 | DAMI220N200 | DAMI220N150 | DAMI160N200 | DAMI160N100 | DAMH75N500H | DAMH560N100