All MOSFET. HPD160N06STA Datasheet

 

HPD160N06STA Datasheet and Replacement


   Type Designator: HPD160N06STA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO-252
 

 HPD160N06STA substitution

   - MOSFET ⓘ Cross-Reference Search

 

HPD160N06STA Datasheet (PDF)

 ..1. Size:424K  cn haohai electr
 hpd160n06sta.pdf pdf_icon

HPD160N06STA

HAOHAI ELECTRONICS HPD160N06STAProduct Summary50A, 60VVDS60 VN-CHANNEL POWER MOSFETRDS(ON) Max.16 m FeaturesAdvanced process technologyID50 AUltra low On-Resistance150 Operating TemperatureFast Switching2.DrainRepetitive Avalanche Allowed up to TjmaxLead-Free D Mechanical DataCaseTO-252Case MaterialMolded PlasticGreenMolding1.

Datasheet: HNM7002 , HNM7002E , HPB068NE7STA , HPD025N03STA , HPD026N02STA , HPD032N02STA , HPD045N03CTA , HPP045N03CTA , IRF630 , HPD180PNE1DTA , HPD4004STA , HPD4006CTA , HPB400N06CTA , HPP400N06CTA , HPM2301 , HPM2305 , HPM2623 .

History: SIHH180N60E

Keywords - HPD160N06STA MOSFET datasheet

 HPD160N06STA cross reference
 HPD160N06STA equivalent finder
 HPD160N06STA lookup
 HPD160N06STA substitution
 HPD160N06STA replacement

 

 
Back to Top

 


 
.