HPD160N06STA Datasheet. Specs and Replacement

Type Designator: HPD160N06STA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 130 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 100 nS

Cossⓘ - Output Capacitance: 430 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm

Package: TO-252

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HPD160N06STA datasheet

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HPD160N06STA

HAOHAI ELECTRONICS HPD160N06STA Product Summary 50A, 60V VDS 60 V N-CHANNEL POWER MOSFET RDS(ON) Max. 16 m Features Advanced process technology ID 50 A Ultra low On-Resistance 150 Operating Temperature Fast Switching 2.Drain Repetitive Avalanche Allowed up to Tjmax Lead-Free D Mechanical Data Case TO-252 Case Material Molded Plastic Green Molding 1.... See More ⇒

Detailed specifications: HNM7002, HNM7002E, HPB068NE7STA, HPD025N03STA, HPD026N02STA, HPD032N02STA, HPD045N03CTA, HPP045N03CTA, IRFP260N, HPD180PNE1DTA, HPD4004STA, HPD4006CTA, HPB400N06CTA, HPP400N06CTA, HPM2301, HPM2305, HPM2623

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