All MOSFET. HPD160N06STA Datasheet

 

HPD160N06STA Datasheet and Replacement


   Type Designator: HPD160N06STA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 130 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 100 nS
   Cossⓘ - Output Capacitance: 430 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.03 Ohm
   Package: TO-252
 

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HPD160N06STA Datasheet (PDF)

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HPD160N06STA

HAOHAI ELECTRONICS HPD160N06STAProduct Summary50A, 60VVDS60 VN-CHANNEL POWER MOSFETRDS(ON) Max.16 m FeaturesAdvanced process technologyID50 AUltra low On-Resistance150 Operating TemperatureFast Switching2.DrainRepetitive Avalanche Allowed up to TjmaxLead-Free D Mechanical DataCaseTO-252Case MaterialMolded PlasticGreenMolding1.

Datasheet: HNM7002 , HNM7002E , HPB068NE7STA , HPD025N03STA , HPD026N02STA , HPD032N02STA , HPD045N03CTA , HPP045N03CTA , IRFP260N , HPD180PNE1DTA , HPD4004STA , HPD4006CTA , HPB400N06CTA , HPP400N06CTA , HPM2301 , HPM2305 , HPM2623 .

History: HPD180PNE1DTA

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