All MOSFET. HPD180PNE1DTA Datasheet

 

HPD180PNE1DTA Datasheet and Replacement


   Type Designator: HPD180PNE1DTA
   Type of Transistor: MOSFET
   Type of Control Channel: NP -Channel
   Pd ⓘ - Maximum Power Dissipation: 25 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 15 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V
   |Id| ⓘ - Maximum Drain Current: 30 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 2.2 nS
   Cossⓘ - Output Capacitance: 77 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm
   Package: TO-252-4
 

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HPD180PNE1DTA Datasheet (PDF)

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HPD180PNE1DTA

HAOHAI ELECTRONICS HPD180PNE1DTAProduct Summary45A, 20V & -30A, -15VN+P CHANNEL MOSFETSymbol N P UnitFeaturesAdvanced process technology V20 -15 VDSUltra low On-Resistance150 Operating TemperatureR typ8 15 mDS(on) Fast SwitchingRepetitive Avalanche Allowed up to TjmaxI45 -30 ADLead-FreeD1 / D2D1/D2PackageTO-252-4PinG1 G2G2S2G1S1S

Datasheet: HNM7002E , HPB068NE7STA , HPD025N03STA , HPD026N02STA , HPD032N02STA , HPD045N03CTA , HPP045N03CTA , HPD160N06STA , 10N60 , HPD4004STA , HPD4006CTA , HPB400N06CTA , HPP400N06CTA , HPM2301 , HPM2305 , HPM2623 , HPM3401 .

History: UTM3023 | NDP606A | VB562K | FQPF2N50 | SDF450 | GSM4804 | IRHNA57260

Keywords - HPD180PNE1DTA MOSFET datasheet

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