HPD180PNE1DTA Datasheet. Specs and Replacement

Type Designator: HPD180PNE1DTA  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: NP-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 25 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 15 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 12 V

|Id| ⓘ - Maximum Drain Current: 30 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 2.2 nS

Cossⓘ - Output Capacitance: 77 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.015 Ohm

Package: TO-252-4

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HPD180PNE1DTA datasheet

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HPD180PNE1DTA

HAOHAI ELECTRONICS HPD180PNE1DTA Product Summary 45A, 20V & -30A, -15V N+P CHANNEL MOSFET Symbol N P Unit Features Advanced process technology V 20 -15 V DS Ultra low On-Resistance 150 Operating Temperature R typ 8 15 m DS(on) Fast Switching Repetitive Avalanche Allowed up to Tjmax I 45 -30 A D Lead-Free D1 / D2 D1/D2 Package TO-252-4Pin G1 G2 G2 S2 G1 S1 S... See More ⇒

Detailed specifications: HNM7002E, HPB068NE7STA, HPD025N03STA, HPD026N02STA, HPD032N02STA, HPD045N03CTA, HPP045N03CTA, HPD160N06STA, IRFZ44, HPD4004STA, HPD4006CTA, HPB400N06CTA, HPP400N06CTA, HPM2301, HPM2305, HPM2623, HPM3401

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Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.