All MOSFET. HPM2301 Datasheet

 

HPM2301 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HPM2301
   Marking Code: A1
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1.5 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT-23

 HPM2301 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HPM2301 Datasheet (PDF)

 ..1. Size:235K  cn haohai electr
 hpm2301.pdf

HPM2301 HPM2301

HPM2301P-Channel MOSFETs-2.8A,-20VP P HPM2301P-Channel Enhancement-Mode MOS FETsP-ChannelEnhancementFeaturesMode MOS FETs-20V, -2.8A, RDS(ON)=100m @ VGS=-10VHigh dense cell design for extremely low RDS(ON)Rugged and reliableLea

 8.1. Size:282K  cn haohai electr
 hpm2305.pdf

HPM2301 HPM2301

HPM2305P-Channel MOSFETs-3.9A,-20VP P HPM2305P-Channel Enhancement-Mode MOS FETs SMDP-ChannelEnhancementFeaturesMode MOS FETs-20V, -3.9A, RDS(ON)=55m @ VGS=-4.5VHigh dense cell design for extremely low RDS(ON)Rugged and reliable

Datasheet: IRFP344 , IRFP350 , IRFP350A , IRFP350FI , IRFP350LC , IRFP351 , IRFP352 , IRFP353 , IRF1010E , IRFP360 , IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 .

 

 
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