HPM2301 PDF Specs and Replacement
Type Designator: HPM2301
Type of Transistor: MOSFET
Type of Control Channel: P -Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 0.9 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
|Id| ⓘ - Maximum Drain Current: 2.8 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 120 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
Package: SOT-23
HPM2301 substitution
HPM2301 PDF Specs
hpm2301.pdf
HPM2301 P-Channel MOSFETs -2.8A,-20V P P HPM2301 P-Channel Enhancement-Mode MOS FETs P-Channel Enhancement Features Mode MOS FETs -20V, -2.8A, RDS(ON)=100m @ VGS=-10V High dense cell design for extremely low RDS(ON) Rugged and reliable Lea... See More ⇒
hpm2305.pdf
HPM2305 P-Channel MOSFETs -3.9A,-20V P P HPM2305 P-Channel Enhancement-Mode MOS FETs SMD P-Channel Enhancement Features Mode MOS FETs -20V, -3.9A, RDS(ON)=55m @ VGS=-4.5V High dense cell design for extremely low RDS(ON) Rugged and reliable ... See More ⇒
Detailed specifications: HPD045N03CTA , HPP045N03CTA , HPD160N06STA , HPD180PNE1DTA , HPD4004STA , HPD4006CTA , HPB400N06CTA , HPP400N06CTA , AON6414A , HPM2305 , HPM2623 , HPM3401 , HPM3401A , HPM3415 , HPMB84A , HPP080NE5SPA , HPP120N08STA .
History: US6M11
Keywords - HPM2301 MOSFET specs
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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.
History: US6M11
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MOSFET: AP4688S | AP4606 | AP4580
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