All MOSFET. HPM2301 Datasheet

 

HPM2301 MOSFET. Datasheet pdf. Equivalent


   Type Designator: HPM2301
   Type of Transistor: MOSFET
   Type of Control Channel: P -Channel
   Pdⓘ - Maximum Power Dissipation: 0.9 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 20 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 10 V
   |Id|ⓘ - Maximum Drain Current: 2.8 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Cossⓘ - Output Capacitance: 120 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.12 Ohm
   Package: SOT-23

 HPM2301 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HPM2301 Datasheet (PDF)

 ..1. Size:235K  cn haohai electr
 hpm2301.pdf

HPM2301 HPM2301

HPM2301P-Channel MOSFETs-2.8A,-20VP P HPM2301P-Channel Enhancement-Mode MOS FETsP-ChannelEnhancementFeaturesMode MOS FETs-20V, -2.8A, RDS(ON)=100m @ VGS=-10VHigh dense cell design for extremely low RDS(ON)Rugged and reliableLea

 8.1. Size:282K  cn haohai electr
 hpm2305.pdf

HPM2301 HPM2301

HPM2305P-Channel MOSFETs-3.9A,-20VP P HPM2305P-Channel Enhancement-Mode MOS FETs SMDP-ChannelEnhancementFeaturesMode MOS FETs-20V, -3.9A, RDS(ON)=55m @ VGS=-4.5VHigh dense cell design for extremely low RDS(ON)Rugged and reliable

Datasheet: FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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