HPP080NE5SPA Datasheet. Specs and Replacement
Type Designator: HPP080NE5SPA 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 670 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO-220
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HPP080NE5SPA substitution
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HPP080NE5SPA datasheet
hpp080ne5spa.pdf
HAOHAI ELECTRONICS HPP080NE5SPA Product Summary 110A, 55V VDS 55 V N-CHANNEL POWER MOSFET RDS(ON) Max. 8.0 m Features Advanced process technology ID 110 A Ultra low On-Resistance 175 OperatingTemperature Fast Switching 2.Drain RepetitiveAvalancheAllowed up toTjmax Lead-Free 1.Gate TO-220C 1 2 3.Source 3 ORDERING INFORMATION Pin Assignment Packing Order Number P... See More ⇒
Detailed specifications: HPP400N06CTA, HPM2301, HPM2305, HPM2623, HPM3401, HPM3401A, HPM3415, HPMB84A, IRFP250N, HPP120N08STA, HPW080NE5SPA, HPW750N20SPA, HQB7N65C, HQF7N65C, IRFD24N, NCE01ND03S, NCE020N30K
Keywords - HPP080NE5SPA MOSFET specs
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MOSFET Parameters. How They Affect Each Other
History: SI7540DP | NDH833N | 2SK2415 | MTP4N08 | NDD60N550U1 | 2SK4066 | SI7434DP
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