All MOSFET. HPP080NE5SPA Datasheet

 

HPP080NE5SPA Datasheet and Replacement


   Type Designator: HPP080NE5SPA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 68 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 110 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 670 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
   Package: TO-220
 

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HPP080NE5SPA Datasheet (PDF)

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HPP080NE5SPA

HAOHAI ELECTRONICS HPP080NE5SPAProduct Summary110A, 55VVDS55 VN-CHANNEL POWER MOSFETRDS(ON) Max.8.0 mFeaturesAdvanced process technologyID110 AUltra low On-Resistance175 OperatingTemperatureFast Switching2.DrainRepetitiveAvalancheAllowed up toTjmaxLead-Free1.GateTO-220C123.Source3ORDERING INFORMATIONPin AssignmentPackingOrder Number P

Datasheet: HPP400N06CTA , HPM2301 , HPM2305 , HPM2623 , HPM3401 , HPM3401A , HPM3415 , HPMB84A , 7N65 , HPP120N08STA , HPW080NE5SPA , HPW750N20SPA , HQB7N65C , HQF7N65C , IRFD24N , NCE01ND03S , NCE020N30K .

History: CS4N80A3HD-G | TK6A53D | IRFH5300 | WMB060N10LGS | AUIRLR3705Z | IRFPF40 | MS23N36

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