HPP080NE5SPA Datasheet and Replacement
Type Designator: HPP080NE5SPA
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 68 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 55 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 110 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 50 nS
Cossⓘ - Output Capacitance: 670 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.008 Ohm
Package: TO-220
HPP080NE5SPA substitution
HPP080NE5SPA Datasheet (PDF)
hpp080ne5spa.pdf
HAOHAI ELECTRONICS HPP080NE5SPAProduct Summary110A, 55VVDS55 VN-CHANNEL POWER MOSFETRDS(ON) Max.8.0 mFeaturesAdvanced process technologyID110 AUltra low On-Resistance175 OperatingTemperatureFast Switching2.DrainRepetitiveAvalancheAllowed up toTjmaxLead-Free1.GateTO-220C123.Source3ORDERING INFORMATIONPin AssignmentPackingOrder Number P
Datasheet: HPP400N06CTA , HPM2301 , HPM2305 , HPM2623 , HPM3401 , HPM3401A , HPM3415 , HPMB84A , IRF9540 , HPP120N08STA , HPW080NE5SPA , HPW750N20SPA , HQB7N65C , HQF7N65C , IRFD24N , NCE01ND03S , NCE020N30K .
History: NCE40P15K
Keywords - HPP080NE5SPA MOSFET datasheet
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History: NCE40P15K
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