All MOSFET. HPP120N08STA Datasheet

 

HPP120N08STA Datasheet and Replacement


   Type Designator: HPP120N08STA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 70 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 79 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0094 Ohm
   Package: TO-220
 

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HPP120N08STA Datasheet (PDF)

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HPP120N08STA

HPP120N08STAProduct Summary80V 70A N-CHANNEL POWER MOSFETVDS80 VFeaturesAdvanced Process TechnologyRDS(ON) Max.12 mUltra Low On-ResistanceDynamic dv/dt RatingID70 A175 Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to Tjmax 2.DrainLead-Free1.GateGDSMarking TO-2203.SourceORDERING INFORMATIONPin AssignmentPacking

Datasheet: HPM2301 , HPM2305 , HPM2623 , HPM3401 , HPM3401A , HPM3415 , HPMB84A , HPP080NE5SPA , K3569 , HPW080NE5SPA , HPW750N20SPA , HQB7N65C , HQF7N65C , IRFD24N , NCE01ND03S , NCE020N30K , NCE025N30G .

History: IRFP442

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