HPP120N08STA Datasheet. Specs and Replacement
Type Designator: HPP120N08STA 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 170 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 70 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Electrical Characteristics
tr ⓘ - Rise Time: 79 nS
Cossⓘ - Output Capacitance: 420 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0094 Ohm
Package: TO-220
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HPP120N08STA substitution
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HPP120N08STA datasheet
hpp120n08sta.pdf
HPP120N08STA Product Summary 80V 70A N-CHANNEL POWER MOSFET VDS 80 V Features Advanced Process Technology RDS(ON) Max. 12 m Ultra Low On-Resistance Dynamic dv/dt Rating ID 70 A 175 Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax 2.Drain Lead-Free 1.Gate G D S Marking TO-220 3.Source ORDERING INFORMATION Pin Assignment Packing ... See More ⇒
Detailed specifications: HPM2301, HPM2305, HPM2623, HPM3401, HPM3401A, HPM3415, HPMB84A, HPP080NE5SPA, IRF4905, HPW080NE5SPA, HPW750N20SPA, HQB7N65C, HQF7N65C, IRFD24N, NCE01ND03S, NCE020N30K, NCE025N30G
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History: 2SK2469-01MR | NCE020N30K | 2SK2959 | MTP4N08 | 2SK163 | 2SK4066 | G2302
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