All MOSFET. HPP120N08STA Datasheet

 

HPP120N08STA MOSFET. Datasheet pdf. Equivalent


   Type Designator: HPP120N08STA
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 170 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 80 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id|ⓘ - Maximum Drain Current: 70 A
   Tjⓘ - Maximum Junction Temperature: 175 °C
   Qgⓘ - Total Gate Charge: 28 nC
   trⓘ - Rise Time: 79 nS
   Cossⓘ - Output Capacitance: 420 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0094 Ohm
   Package: TO-220

 HPP120N08STA Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

HPP120N08STA Datasheet (PDF)

 ..1. Size:637K  cn haohai electr
 hpp120n08sta.pdf

HPP120N08STA HPP120N08STA

HPP120N08STAProduct Summary80V 70A N-CHANNEL POWER MOSFETVDS80 VFeaturesAdvanced Process TechnologyRDS(ON) Max.12 mUltra Low On-ResistanceDynamic dv/dt RatingID70 A175 Operating TemperatureFast SwitchingRepetitive Avalanche Allowed up to Tjmax 2.DrainLead-Free1.GateGDSMarking TO-2203.SourceORDERING INFORMATIONPin AssignmentPacking

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