HQB7N65C Datasheet. Specs and Replacement

Type Designator: HQB7N65C  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 150 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 650 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 7 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 50 nS

Cossⓘ - Output Capacitance: 100 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm

Package: TO-220

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HQB7N65C datasheet

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HQB7N65C

7N65 Series Product Parameter Specification 7A, 650V, N-Channel Power Field Effect Transistor Package Packing Quantity Quantity Quantity Industrial model Poplular name H Identificattion Method Per Tube Per Box Per Carton FQP7N65C HQB7N65C P TO-220P HAOHAI TUBE 50Pcs 1000Pcs 5000Pcs FQPF7N65C HQF7N65C F TO-220F 7N65 Series Pin Assignment ID=7A 3-Lead Plastic TO-220P Package Code P... See More ⇒

Detailed specifications: HPM3401, HPM3401A, HPM3415, HPMB84A, HPP080NE5SPA, HPP120N08STA, HPW080NE5SPA, HPW750N20SPA, AON7408, HQF7N65C, IRFD24N, NCE01ND03S, NCE020N30K, NCE025N30G, NCE025N30K, NCE035N30G, NCE035N30K

Keywords - HQB7N65C MOSFET specs

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