All MOSFET. HQB7N65C Datasheet

 

HQB7N65C Datasheet and Replacement


   Type Designator: HQB7N65C
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 150 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 650 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id| ⓘ - Maximum Drain Current: 7 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 50 nS
   Cossⓘ - Output Capacitance: 100 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 1.4 Ohm
   Package: TO-220
 

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HQB7N65C Datasheet (PDF)

 ..1. Size:368K  cn haohai electr
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HQB7N65C

7N65 SeriesProduct Parameter Specification7A, 650V, N-Channel Power Field Effect TransistorPackage Packing Quantity Quantity QuantityIndustrial model Poplular name HIdentificattion Method Per Tube Per Box Per CartonFQP7N65C HQB7N65C P: TO-220PHAOHAI TUBE 50Pcs 1000Pcs 5000PcsFQPF7N65C HQF7N65C F: TO-220F7N65 Series Pin AssignmentID=7A3-Lead Plastic TO-220PPackage Code: P

Datasheet: HPM3401 , HPM3401A , HPM3415 , HPMB84A , HPP080NE5SPA , HPP120N08STA , HPW080NE5SPA , HPW750N20SPA , 12N60 , HQF7N65C , IRFD24N , NCE01ND03S , NCE020N30K , NCE025N30G , NCE025N30K , NCE035N30G , NCE035N30K .

History: KTK597V | SFB096N200C3 | AM110N06-08P | NP90N04VLG | RJK0223DNS | 2SJ485 | JCS8N60SB

Keywords - HQB7N65C MOSFET datasheet

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