FQH44N10 Specs and Replacement
Type Designator: FQH44N10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 180 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 48 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.039 Ohm
Package: TO247 TO3P TO3PF
FQH44N10 substitution
FQH44N10 Specs
fqh44n10 f133.pdf
Octorber 2008 QFET FQH44N10_F133 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 48A, 100V, RDS(on) = 0.039 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology has been especially t... See More ⇒
fqh44n10.pdf
Octorber 2008 QFET FQH44N10_F133 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 48A, 100V, RDS(on) = 0.039 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 48 nC) planar stripe, DMOS technology. Low Crss ( typical 85 pF) This advanced technology has been especially t... See More ⇒
Detailed specifications: IRFS450B , FQD7N30 , FQD7P06 , FQD7P20 , FQD8P10 , FQD8P10TMF085 , FQD9N25 , FQD9N25TMF085 , IRF840 , FDS4480 , FQH8N100C , FQI13N50C , FQI27N25 , FQI27N25TUF085 , FQI4N80 , IRFW630B , FQI4N90 .
History: FQI4N80
Keywords - FQH44N10 MOSFET specs
FQH44N10 cross reference
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FQH44N10 replacement
Step-by-step guide to finding a MOSFET replacement. Cross-reference parts and ensure compatibility for your repair or project.
History: FQI4N80
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