All MOSFET. FQH44N10 Datasheet

 

FQH44N10 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQH44N10

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 180 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 48 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 48 nC

Maximum Drain-Source On-State Resistance (Rds): 0.039 Ohm

Package: TO247, TO3P, TO3PF

FQH44N10 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQH44N10 Datasheet (PDF)

0.1. fqh44n10 f133.pdf Size:974K _fairchild_semi

FQH44N10
FQH44N10

Octorber 2008 ® QFET FQH44N10_F133 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 48A, 100V, RDS(on) = 0.039Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 48 nC) planar stripe, DMOS technology. • Low Crss ( typical 85 pF) This advanced technology has been especially t

0.2. fqh44n10.pdf Size:982K _fairchild_semi

FQH44N10
FQH44N10

Octorber 2008 ® QFET FQH44N10_F133 100V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect • 48A, 100V, RDS(on) = 0.039Ω @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 48 nC) planar stripe, DMOS technology. • Low Crss ( typical 85 pF) This advanced technology has been especially t

 

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