All MOSFET. BLQM15N06L-D Datasheet

 

BLQM15N06L-D Datasheet and Replacement


   Type Designator: BLQM15N06L-D
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 83 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 50 A
   Tj ⓘ - Maximum Junction Temperature: 175 °C
   tr ⓘ - Rise Time: 6 nS
   Cossⓘ - Output Capacitance: 94 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm
   Package: TO-252
 

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BLQM15N06L-D Datasheet (PDF)

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BLQM15N06L-D

Green Product BLQM15N06L 60V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLQM15N06L uses advanced trench technology to V = 60V,I = DS D 50A R

Datasheet: BLP12N10GL-Q , BLP12N10G-P , BLP12N10G-Q , BLP12N10G-U , BLP14N08L-D , BLP14N08L-Q , BLP20N10L-D , BLP20N10L-Q , IRF630 , BLS60R036-F , BLS60R036-W , BLS60R150-A , BLS60R150-F , BLS60R150F-A , BLS60R150F-B , BLS60R150F-I , BLS60R150F-P .

History: ISCNL256N | LSG60R280HT | IRFS530A | SI1410EDH | GSM8988 | 2SK298 | SI1555DL

Keywords - BLQM15N06L-D MOSFET datasheet

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