BLQM15N06L-D Datasheet. Specs and Replacement

Type Designator: BLQM15N06L-D  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 83 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 50 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 6 nS

Cossⓘ - Output Capacitance: 94 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.003 Ohm

Package: TO-252

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BLQM15N06L-D datasheet

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BLQM15N06L-D

Green Product BLQM15N06L 60V N-Channel Power MOSFET DESCRIPTION KEY CHARACTERISTICS The BLQM15N06L uses advanced trench technology to V = 60V,I = DS D 50A R ... See More ⇒

Detailed specifications: BLP12N10GL-Q, BLP12N10G-P, BLP12N10G-Q, BLP12N10G-U, BLP14N08L-D, BLP14N08L-Q, BLP20N10L-D, BLP20N10L-Q, IRFP260N, BLS60R036-F, BLS60R036-W, BLS60R150-A, BLS60R150-F, BLS60R150F-A, BLS60R150F-B, BLS60R150F-I, BLS60R150F-P

Keywords - BLQM15N06L-D MOSFET specs

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