All MOSFET. DAMH560N100 Datasheet

 

DAMH560N100 MOSFET. Datasheet pdf. Equivalent


   Type Designator: DAMH560N100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 890 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 560 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 449 nC
   trⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 2848 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm
   Package: MODULE

 DAMH560N100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DAMH560N100 Datasheet (PDF)

 ..1. Size:288K  dacosemi
 damh560n100.pdf

DAMH560N100 DAMH560N100

DAMH560N100DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 100V RDS(ON)

 9.1. Size:328K  dacosemi
 damh50n500h.pdf

DAMH560N100 DAMH560N100

DAMH50N500HDACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement ModePower MOSFET 500V / 50AHB-9434PreliminaryFeatures VDSS = 500V RDS(ON) Typ.110 GS Fully Avalanche Rated Pb Free & RoHS Compliant Isolation Type Package Electrically Isolation base plateApplications Backlighting Power Converters Synchronous Rectifiers Absolute Maxi

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