DAMH560N100 Specs and Replacement
Type Designator: DAMH560N100
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 890 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 560 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 68 nS
Cossⓘ - Output Capacitance: 2848 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm
Package: MODULE
DAMH560N100 substitution
- MOSFET ⓘ Cross-Reference Search
DAMH560N100 datasheet
damh560n100.pdf
DAMH560N100 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Preliminary HB-9434 Features VDSS = 100V RDS(ON) ... See More ⇒
damh50n500h.pdf
DAMH50N500H DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode Power MOSFET 500V / 50A HB-9434 Preliminary Features VDSS = 500V RDS(ON) Typ.110 GS Fully Avalanche Rated Pb Free & RoHS Compliant Isolation Type Package Electrically Isolation base plate Applications Backlighting Power Converters Synchronous Rectifiers Absolute Maxi... See More ⇒
Detailed specifications: DAMH220N150 , DAMH220N200 , DAMH280N200 , DAMH300N150 , DAMH320N100 , DAMH360N150 , DAMH450N100 , DAMH50N500H , IRFB4110 , DAMH75N500H , DAMI160N100 , DAMI160N200 , DAMI220N150 , DAMI220N200 , DAMI280N200 , DAMI300N150 , DAMI320N100 .
Keywords - DAMH560N100 MOSFET specs
DAMH560N100 cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
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