All MOSFET. DAMH560N100 Datasheet

 

DAMH560N100 Datasheet and Replacement


   Type Designator: DAMH560N100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 890 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 560 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 68 nS
   Cossⓘ - Output Capacitance: 2848 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm
   Package: MODULE
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DAMH560N100 Datasheet (PDF)

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DAMH560N100

DAMH560N100DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminaryHB-9434Features VDSS = 100V RDS(ON)

 9.1. Size:328K  dacosemi
 damh50n500h.pdf pdf_icon

DAMH560N100

DAMH50N500HDACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement ModePower MOSFET 500V / 50AHB-9434PreliminaryFeatures VDSS = 500V RDS(ON) Typ.110 GS Fully Avalanche Rated Pb Free & RoHS Compliant Isolation Type Package Electrically Isolation base plateApplications Backlighting Power Converters Synchronous Rectifiers Absolute Maxi

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