DAMH560N100 Datasheet. Specs and Replacement

Type Designator: DAMH560N100  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 890 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 560 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 68 nS

Cossⓘ - Output Capacitance: 2848 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0011 Ohm

Package: MODULE

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DAMH560N100 substitution

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DAMH560N100 datasheet

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DAMH560N100

DAMH560N100 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Preliminary HB-9434 Features VDSS = 100V RDS(ON) ... See More ⇒

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 damh50n500h.pdf pdf_icon

DAMH560N100

DAMH50N500H DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode Power MOSFET 500V / 50A HB-9434 Preliminary Features VDSS = 500V RDS(ON) Typ.110 GS Fully Avalanche Rated Pb Free & RoHS Compliant Isolation Type Package Electrically Isolation base plate Applications Backlighting Power Converters Synchronous Rectifiers Absolute Maxi... See More ⇒

Detailed specifications: DAMH220N150, DAMH220N200, DAMH280N200, DAMH300N150, DAMH320N100, DAMH360N150, DAMH450N100, DAMH50N500H, 2N7002, DAMH75N500H, DAMI160N100, DAMI160N200, DAMI220N150, DAMI220N200, DAMI280N200, DAMI300N150, DAMI320N100

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