DAMH75N500H Datasheet. Specs and Replacement
Type Designator: DAMH75N500H 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 500 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 55 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 120 nS
Cossⓘ - Output Capacitance: 700 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
Package: MODULE
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DAMH75N500H substitution
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DAMH75N500H datasheet
damh75n500h.pdf
DAMH75N500H DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode Power MOSFET 500V / 75A Preliminary HB-9434 Features VDSS = 500V RDS(ON) Typ.65 GS Fully Avalanche Rated Pb Free & RoHS Compliant Isolation Type Package Electrically Isolation base plate Applications Backlighting Power Converters Synchronous Rectifiers Absolute Maxim... See More ⇒
Detailed specifications: DAMH220N200, DAMH280N200, DAMH300N150, DAMH320N100, DAMH360N150, DAMH450N100, DAMH50N500H, DAMH560N100, IRFP260N, DAMI160N100, DAMI160N200, DAMI220N150, DAMI220N200, DAMI280N200, DAMI300N150, DAMI320N100, DAMI330N60
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