All MOSFET. DAMH75N500H Datasheet

 

DAMH75N500H Datasheet and Replacement


   Type Designator: DAMH75N500H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: MODULE
 

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DAMH75N500H Datasheet (PDF)

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DAMH75N500H

DAMH75N500HDACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement ModePower MOSFET 500V / 75APreliminaryHB-9434Features VDSS = 500V RDS(ON) Typ.65 GS Fully Avalanche Rated Pb Free & RoHS Compliant Isolation Type Package Electrically Isolation base plateApplications Backlighting Power Converters Synchronous Rectifiers Absolute Maxim

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History: AUIRFP1405

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