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DAMH75N500H Specs and Replacement


   Type Designator: DAMH75N500H
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 500 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 500 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 55 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 120 nS
   Cossⓘ - Output Capacitance: 700 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.075 Ohm
   Package: MODULE
 

 DAMH75N500H substitution

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DAMH75N500H Specs

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DAMH75N500H

DAMH75N500H DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode Power MOSFET 500V / 75A Preliminary HB-9434 Features VDSS = 500V RDS(ON) Typ.65 GS Fully Avalanche Rated Pb Free & RoHS Compliant Isolation Type Package Electrically Isolation base plate Applications Backlighting Power Converters Synchronous Rectifiers Absolute Maxim... See More ⇒

Detailed specifications: DAMH220N200 , DAMH280N200 , DAMH300N150 , DAMH320N100 , DAMH360N150 , DAMH450N100 , DAMH50N500H , DAMH560N100 , IRF640N , DAMI160N100 , DAMI160N200 , DAMI220N150 , DAMI220N200 , DAMI280N200 , DAMI300N150 , DAMI320N100 , DAMI330N60 .

Keywords - DAMH75N500H MOSFET specs

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