All MOSFET. DAMI160N200 Datasheet

 

DAMI160N200 Datasheet and Replacement


   Type Designator: DAMI160N200
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 440 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 160 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 671 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0103 Ohm
   Package: SOT227
 

 DAMI160N200 substitution

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DAMI160N200 Datasheet (PDF)

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DAMI160N200

DAMI160N200DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminaryFeaturesSOT-227 VDSS = 200V SG RDS(ON)

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DAMI160N200

DAMI160N100DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETSOT-227PreliminaryFeaturesSG VDSS = 100V RDS(ON)

Datasheet: DAMH300N150 , DAMH320N100 , DAMH360N150 , DAMH450N100 , DAMH50N500H , DAMH560N100 , DAMH75N500H , DAMI160N100 , IRFB4227 , DAMI220N150 , DAMI220N200 , DAMI280N200 , DAMI300N150 , DAMI320N100 , DAMI330N60 , DAMI360N150 , DAMI450N100 .

History: IPP50N10S3L-16

Keywords - DAMI160N200 MOSFET datasheet

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