All MOSFET. DAMI160N200 Datasheet

 

DAMI160N200 MOSFET. Datasheet pdf. Equivalent


   Type Designator: DAMI160N200
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 440 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 160 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 198 nC
   trⓘ - Rise Time: 36 nS
   Cossⓘ - Output Capacitance: 671 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0103 Ohm
   Package: SOT227

 DAMI160N200 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DAMI160N200 Datasheet (PDF)

 ..1. Size:507K  dacosemi
 dami160n200.pdf

DAMI160N200 DAMI160N200

DAMI160N200DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminaryFeaturesSOT-227 VDSS = 200V SG RDS(ON)

 6.1. Size:506K  dacosemi
 dami160n100.pdf

DAMI160N200 DAMI160N200

DAMI160N100DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETSOT-227PreliminaryFeaturesSG VDSS = 100V RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: STB85NF55

 

 
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