DAMI160N200 Datasheet. Specs and Replacement

Type Designator: DAMI160N200  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 440 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 160 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 36 nS

Cossⓘ - Output Capacitance: 671 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0103 Ohm

Package: SOT227

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DAMI160N200 substitution

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DAMI160N200 datasheet

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DAMI160N200

DAMI160N200 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Preliminary Features SOT-227 VDSS = 200V S G RDS(ON) ... See More ⇒

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DAMI160N200

DAMI160N100 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET SOT-227 Preliminary Features S G VDSS = 100V RDS(ON) ... See More ⇒

Detailed specifications: DAMH300N150, DAMH320N100, DAMH360N150, DAMH450N100, DAMH50N500H, DAMH560N100, DAMH75N500H, DAMI160N100, IRF640N, DAMI220N150, DAMI220N200, DAMI280N200, DAMI300N150, DAMI320N100, DAMI330N60, DAMI360N150, DAMI450N100

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Learn how to find the right MOSFET substitute. A guide to cross-reference, check specs and replace MOSFETs in your circuits.