DAMI160N200 Datasheet and Replacement
Type Designator: DAMI160N200
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 440 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 160 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 36 nS
Cossⓘ - Output Capacitance: 671 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0103 Ohm
Package: SOT227
DAMI160N200 substitution
DAMI160N200 Datasheet (PDF)
dami160n200.pdf
DAMI160N200DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminaryFeaturesSOT-227 VDSS = 200V SG RDS(ON)
dami160n100.pdf
DAMI160N100DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETSOT-227PreliminaryFeaturesSG VDSS = 100V RDS(ON)
Datasheet: DAMH300N150 , DAMH320N100 , DAMH360N150 , DAMH450N100 , DAMH50N500H , DAMH560N100 , DAMH75N500H , DAMI160N100 , IRFB4227 , DAMI220N150 , DAMI220N200 , DAMI280N200 , DAMI300N150 , DAMI320N100 , DAMI330N60 , DAMI360N150 , DAMI450N100 .
History: FIR14N50FG
Keywords - DAMI160N200 MOSFET datasheet
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History: FIR14N50FG
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