DAMI280N200 Datasheet and Replacement
Type Designator: DAMI280N200
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 800 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 280 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 56 nS
Cossⓘ - Output Capacitance: 1328 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
Package: SOT227
DAMI280N200 substitution
DAMI280N200 Datasheet (PDF)
dami280n200.pdf
DAMI280N200DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminarySOT-227FeaturesS VDSS = 200V G RDS(ON)
dami220n200.pdf
DAMI220N200DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminarySOT-227FeaturesS VDSS = 200V G RDS(ON)
dami220n150.pdf
DAMI220N150DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminary SOT-227FeaturesS VDSS = 150V G RDS(ON)
Datasheet: DAMH450N100 , DAMH50N500H , DAMH560N100 , DAMH75N500H , DAMI160N100 , DAMI160N200 , DAMI220N150 , DAMI220N200 , 7N65 , DAMI300N150 , DAMI320N100 , DAMI330N60 , DAMI360N150 , DAMI450N100 , DAMI500N60 , DAMI560N100 , DAMI660N60 .
Keywords - DAMI280N200 MOSFET datasheet
DAMI280N200 cross reference
DAMI280N200 equivalent finder
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