All MOSFET. DAMI280N200 Datasheet

 

DAMI280N200 Datasheet and Replacement


   Type Designator: DAMI280N200
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pd ⓘ - Maximum Power Dissipation: 800 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 200 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id| ⓘ - Maximum Drain Current: 280 A
   Tj ⓘ - Maximum Junction Temperature: 150 °C
   tr ⓘ - Rise Time: 56 nS
   Cossⓘ - Output Capacitance: 1328 pF
   Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.006 Ohm
   Package: SOT227
 

 DAMI280N200 substitution

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DAMI280N200 Datasheet (PDF)

 ..1. Size:510K  dacosemi
 dami280n200.pdf pdf_icon

DAMI280N200

DAMI280N200DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminarySOT-227FeaturesS VDSS = 200V G RDS(ON)

 9.1. Size:511K  dacosemi
 dami220n200.pdf pdf_icon

DAMI280N200

DAMI220N200DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminarySOT-227FeaturesS VDSS = 200V G RDS(ON)

 9.2. Size:510K  dacosemi
 dami220n150.pdf pdf_icon

DAMI280N200

DAMI220N150DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminary SOT-227FeaturesS VDSS = 150V G RDS(ON)

Datasheet: DAMH450N100 , DAMH50N500H , DAMH560N100 , DAMH75N500H , DAMI160N100 , DAMI160N200 , DAMI220N150 , DAMI220N200 , IRFB4227 , DAMI300N150 , DAMI320N100 , DAMI330N60 , DAMI360N150 , DAMI450N100 , DAMI500N60 , DAMI560N100 , DAMI660N60 .

History: SIHF12N50C

Keywords - DAMI280N200 MOSFET datasheet

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