All MOSFET. DAMI320N100 Datasheet

 

DAMI320N100 MOSFET. Datasheet pdf. Equivalent


   Type Designator: DAMI320N100
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 424 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 3.5 V
   |Id|ⓘ - Maximum Drain Current: 320 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 321 nC
   trⓘ - Rise Time: 48 nS
   Cossⓘ - Output Capacitance: 1424 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm
   Package: SOT227

 DAMI320N100 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

DAMI320N100 Datasheet (PDF)

 ..1. Size:510K  dacosemi
 dami320n100.pdf

DAMI320N100 DAMI320N100

DAMI320N100DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETSOT-227PreliminaryFeaturesSG VDSS = 100V RDS(ON)

 9.1. Size:503K  dacosemi
 dami330n60.pdf

DAMI320N100 DAMI320N100

DAMI330N60DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETFeatures PreliminarySOT-227 VDSS = 60VSG RDS(ON)

 9.2. Size:509K  dacosemi
 dami360n150.pdf

DAMI320N100 DAMI320N100

DAMI360N150DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminarySOT-227FeaturesSG VDSS = 150V RDS(ON)

 9.3. Size:510K  dacosemi
 dami300n150.pdf

DAMI320N100 DAMI320N100

DAMI300N150DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminarySOT-227FeaturesS VDSS = 150V G RDS(ON)

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

History: FDP032N08B

 

 
Back to Top