DAMI320N100 Datasheet and Replacement
Type Designator: DAMI320N100
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 424 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 320 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 48 nS
Cossⓘ - Output Capacitance: 1424 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm
Package: SOT227
DAMI320N100 substitution
DAMI320N100 Datasheet (PDF)
dami320n100.pdf
DAMI320N100DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETSOT-227PreliminaryFeaturesSG VDSS = 100V RDS(ON)
dami330n60.pdf
DAMI330N60DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETFeatures PreliminarySOT-227 VDSS = 60VSG RDS(ON)
dami360n150.pdf
DAMI360N150DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminarySOT-227FeaturesSG VDSS = 150V RDS(ON)
dami300n150.pdf
DAMI300N150DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminarySOT-227FeaturesS VDSS = 150V G RDS(ON)
Datasheet: DAMH560N100 , DAMH75N500H , DAMI160N100 , DAMI160N200 , DAMI220N150 , DAMI220N200 , DAMI280N200 , DAMI300N150 , AON6414A , DAMI330N60 , DAMI360N150 , DAMI450N100 , DAMI500N60 , DAMI560N100 , DAMI660N60 , DAMIA1100N100 , P0165ED .
Keywords - DAMI320N100 MOSFET datasheet
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