DAMI320N100 Specs and Replacement
Type Designator: DAMI320N100
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 424 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 320 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 48 nS
Cossⓘ - Output Capacitance: 1424 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0021 Ohm
Package: SOT227
DAMI320N100 substitution
DAMI320N100 Specs
dami320n100.pdf
DAMI320N100 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET SOT-227 Preliminary Features S G VDSS = 100V RDS(ON) ... See More ⇒
dami330n60.pdf
DAMI330N60 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Features Preliminary SOT-227 VDSS = 60V S G RDS(ON) ... See More ⇒
dami360n150.pdf
DAMI360N150 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Preliminary SOT-227 Features S G VDSS = 150V RDS(ON) ... See More ⇒
dami300n150.pdf
DAMI300N150 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Preliminary SOT-227 Features S VDSS = 150V G RDS(ON) ... See More ⇒
Detailed specifications: DAMH560N100 , DAMH75N500H , DAMI160N100 , DAMI160N200 , DAMI220N150 , DAMI220N200 , DAMI280N200 , DAMI300N150 , IRFB4115 , DAMI330N60 , DAMI360N150 , DAMI450N100 , DAMI500N60 , DAMI560N100 , DAMI660N60 , DAMIA1100N100 , P0165ED .
History: AON6250 | DAMH560N100 | BUK7E2R3-40E | DAMH75N500H
Keywords - DAMI320N100 MOSFET specs
DAMI320N100 cross reference
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Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: AON6250 | DAMH560N100 | BUK7E2R3-40E | DAMH75N500H
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