All MOSFET. DAMI330N60 Datasheet

 

DAMI330N60 Datasheet and Replacement


   Type Designator: DAMI330N60
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 680 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Id|ⓘ - Maximum Drain Current: 330 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   trⓘ - Rise Time: 180 nS
   Cossⓘ - Output Capacitance: 2200 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
   Package: SOT227
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DAMI330N60 Datasheet (PDF)

 ..1. Size:503K  dacosemi
 dami330n60.pdf pdf_icon

DAMI330N60

DAMI330N60DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETFeatures PreliminarySOT-227 VDSS = 60VSG RDS(ON)

 9.1. Size:510K  dacosemi
 dami320n100.pdf pdf_icon

DAMI330N60

DAMI320N100DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETSOT-227PreliminaryFeaturesSG VDSS = 100V RDS(ON)

 9.2. Size:509K  dacosemi
 dami360n150.pdf pdf_icon

DAMI330N60

DAMI360N150DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminarySOT-227FeaturesSG VDSS = 150V RDS(ON)

 9.3. Size:510K  dacosemi
 dami300n150.pdf pdf_icon

DAMI330N60

DAMI300N150DACO SEMICONDUCTOR CO., LTD.N-Channel Enhancement Mode MOSFETPreliminarySOT-227FeaturesS VDSS = 150V G RDS(ON)

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History: 2SK1658 | 2N6761 | AU7N60S | AMD510C | IRFIZ44A | MMBF170L | SVF4N60M

Keywords - DAMI330N60 MOSFET datasheet

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