DAMI330N60 Datasheet. Specs and Replacement

Type Designator: DAMI330N60  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 680 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 330 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 180 nS

Cossⓘ - Output Capacitance: 2200 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm

Package: SOT227

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DAMI330N60 datasheet

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DAMI330N60

DAMI330N60 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Features Preliminary SOT-227 VDSS = 60V S G RDS(ON) ... See More ⇒

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 dami320n100.pdf pdf_icon

DAMI330N60

DAMI320N100 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET SOT-227 Preliminary Features S G VDSS = 100V RDS(ON) ... See More ⇒

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 dami360n150.pdf pdf_icon

DAMI330N60

DAMI360N150 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Preliminary SOT-227 Features S G VDSS = 150V RDS(ON) ... See More ⇒

 9.3. Size:510K  dacosemi
 dami300n150.pdf pdf_icon

DAMI330N60

DAMI300N150 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Preliminary SOT-227 Features S VDSS = 150V G RDS(ON) ... See More ⇒

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Detailed specifications: DAMH75N500H, DAMI160N100, DAMI160N200, DAMI220N150, DAMI220N200, DAMI280N200, DAMI300N150, DAMI320N100, IRFB4227, DAMI360N150, DAMI450N100, DAMI500N60, DAMI560N100, DAMI660N60, DAMIA1100N100, P0165ED, P0165EI

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