DAMI330N60 Specs and Replacement
Type Designator: DAMI330N60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 680 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 60 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 330 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 180 nS
Cossⓘ - Output Capacitance: 2200 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0014 Ohm
Package: SOT227
DAMI330N60 substitution
DAMI330N60 Specs
dami330n60.pdf
DAMI330N60 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Features Preliminary SOT-227 VDSS = 60V S G RDS(ON) ... See More ⇒
dami320n100.pdf
DAMI320N100 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET SOT-227 Preliminary Features S G VDSS = 100V RDS(ON) ... See More ⇒
dami360n150.pdf
DAMI360N150 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Preliminary SOT-227 Features S G VDSS = 150V RDS(ON) ... See More ⇒
dami300n150.pdf
DAMI300N150 DACO SEMICONDUCTOR CO., LTD. N-Channel Enhancement Mode MOSFET Preliminary SOT-227 Features S VDSS = 150V G RDS(ON) ... See More ⇒
Detailed specifications: DAMH75N500H , DAMI160N100 , DAMI160N200 , DAMI220N150 , DAMI220N200 , DAMI280N200 , DAMI300N150 , DAMI320N100 , 2N7000 , DAMI360N150 , DAMI450N100 , DAMI500N60 , DAMI560N100 , DAMI660N60 , DAMIA1100N100 , P0165ED , P0165EI .
Keywords - DAMI330N60 MOSFET specs
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