FQP46N15 MOSFET. Datasheet pdf. Equivalent
Type Designator: FQP46N15
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 210 W
Maximum Drain-Source Voltage |Vds|: 150 V
Maximum Gate-Source Voltage |Vgs|: 25 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V
Maximum Drain Current |Id|: 45.6 A
Maximum Junction Temperature (Tj): 175 °C
Maximum Drain-Source On-State Resistance (Rds): 0.042 Ohm
Package: TO220
FQP46N15 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
FQP46N15 Datasheet (PDF)
1.1. fqp46n15.pdf 
Size:752K _fairchild_semi
April 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect • 45.6A, 150V, RDS(on) = 0.042? @VGS = 10 V transistors are produced using Fairchild’s proprietary, • Low gate charge ( typical 85 nC) planar stripe, DMOS technology. • Low Crss ( typical 100 pF) This advanced technology has been especially
Datasheet: FCP11N60 , FQP3N80C , FQP15P12 , FQP3P20 , FQP3P50 , FQP44N10 , FQB11N40C , FQP45N15V2 , IRFP150N , FQP47P06 , FQP4N80 , IRFU220B , FQP4N90C , FQP4P40 , FQP50N06L , FQP55N10 , FQP6N60C .
LIST
Last Update
MOSFET: ZXMS6006SGQ | ZXMS6006DT8Q | ZXMS6006DGQ | ZXMS6005SGQ | ZXMS6005DT8Q | ZXMS6005DGQ | ZXMS6004SGQ | ZXMS6004FFQ | ZXMS6004DT8Q | ZXMS6004DGQ | ZXMS6002GQ | ZXMP7A17KTC | ZXMP7A17GTA | ZXMP7A17GQ | ZXMP6A18KTC |