All MOSFET. FQP46N15 Datasheet

 

FQP46N15 MOSFET. Datasheet pdf. Equivalent

Type Designator: FQP46N15

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 210 W

Maximum Drain-Source Voltage |Vds|: 150 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 4 V

Maximum Drain Current |Id|: 45.6 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 85 nC

Maximum Drain-Source On-State Resistance (Rds): 0.042 Ohm

Package: TO220

FQP46N15 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

FQP46N15 Datasheet (PDF)

1.1. fqp46n15.pdf Size:752K _fairchild_semi

FQP46N15
FQP46N15

April 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 45.6A, 150V, RDS(on) = 0.042? @VGS = 10 V transistors are produced using Fairchilds proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 100 pF) This advanced technology has been especially

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