FQP46N15 Spec and Replacement
Type Designator: FQP46N15
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 210 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V
|Id| ⓘ - Maximum Drain Current: 45.6 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm
Package: TO220
FQP46N15 substitution
FQP46N15 Specs
fqp46n15.pdf
April 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 45.6A, 150V, RDS(on) = 0.042 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 100 pF) This advanced technology has be... See More ⇒
Detailed specifications: FCP11N60 , FQP3N80C , FQP15P12 , FQP3P20 , FQP3P50 , FQP44N10 , FQB11N40C , FQP45N15V2 , 75N75 , FQP47P06 , FQP4N80 , IRFU220B , FQP4N90C , FQP4P40 , FQP50N06L , FQP55N10 , FQP6N60C .
History: FQP47P06 | IRF9358PBF | 2N6770JANTX | IPP029N06N | IRF9310PBF
Keywords - FQP46N15 MOSFET specs
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FQP46N15 replacement
Need a MOSFET replacement? Our guide shows you how to find a perfect substitute by comparing key parameters and specs
History: FQP47P06 | IRF9358PBF | 2N6770JANTX | IPP029N06N | IRF9310PBF
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