FQP46N15 Datasheet. Specs and Replacement

Type Designator: FQP46N15  📄📄 

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 210 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 150 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 25 V

|Id| ⓘ - Maximum Drain Current: 45.6 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.042 Ohm

Package: TO220

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FQP46N15 datasheet

 ..1. Size:752K  fairchild semi
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FQP46N15

April 2000 TM QFET QFET QFET QFET 150V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 45.6A, 150V, RDS(on) = 0.042 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 85 nC) planar stripe, DMOS technology. Low Crss ( typical 100 pF) This advanced technology has be... See More ⇒

Detailed specifications: FCP11N60, FQP3N80C, FQP15P12, FQP3P20, FQP3P50, FQP44N10, FQB11N40C, FQP45N15V2, IRF730, FQP47P06, FQP4N80, IRFU220B, FQP4N90C, FQP4P40, FQP50N06L, FQP55N10, FQP6N60C

Keywords - FQP46N15 MOSFET specs

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